ChipNobo AO3401A CN MOSFET with Pb Free Halogen Free Certification and Continuous Drain Current 4.2A
Key Attributes
Model Number:
AO3401A-CN
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Pd - Power Dissipation:
1.2W
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
655pF
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
AO3401A-CN
Package:
SOT-23-3L
Product Description
Product Overview
The AO3401A-CN is a high-performance MOSFET designed for load switching, switching circuits, high-speed line drivers, and power management functions. It features low RDS(on) at VGS=-10V, -3.3V logic level control, and is RoHS compliant, Pb-Free, and Halogen Free. This device offers a VDS of -30V and continuous drain current (ID) of -4.2A at TA=25C.
Product Attributes
- Brand: ChipNobo
- Certifications: RoHS Compliant, PbFree, Halogen Free
- Device Type: MOSFET
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Device Type | AO3401A-CN | |||||
| Device Marking | A19T | |||||
| Package | SOT-23-3L | |||||
| Reel Size | 7 Inch | |||||
| Standard Packaging Quantity (SPQ) | 3000/Reel | |||||
| Minimum Packaging Quantity (MPQ) | 45000/Box | |||||
| Minimum Order Quantity (MOQ) | 180000/Carton | |||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -4.2 | A | ||
| Continuous Drain Current | ID | TA=70C | -3.3 | A | ||
| Pulse Drain Current | IDM | Pulse width limited by maximum allowable junction temperature | -16.8 | A | ||
| Power Dissipation | PD | TA=25C | 1.2 | W | ||
| Power Dissipation | PD | TA=70C | 0.9 | W | ||
| Storage Temperature | Tstg | -50 | +150 | C | ||
| Thermal Resistance, Junction-Ambient | RJA | 80 | C/W | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -100 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -0.8 | -1.2 | V |
| Drain-Source on-state resistance | RDS(on) | VGS=-10V, ID=-4A | 44 | 55 | m | |
| Drain-Source on-state resistance | RDS(on) | VGS=-4.5V, ID=-3A | 51 | 60 | m | |
| Drain-Source on-state resistance | RDS(on) | VGS=-3.3V, ID=-3A | 58 | 75 | m | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 655 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 53 | pF | |||
| Total Gate Charge | Qg | VDS=-15V, ID=-4A, VGS=-4.5V | 7.2 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | ||||
| Gate-Drain Charge | Qgd | 2.6 | ||||
| Turn-on delay time | td(on) | VDD=-15V, ID=-2A, VGS=-10V, RG=3.3 | 7.0 | ns | ||
| Rise Time | tr | 3.8 | ||||
| Turn-off delay time | Td(off) | 35 | ||||
| Fall time | tf | 10.5 | ||||
| Operating junction temperature | Tj | +150 | C | |||
| Diode forward voltage | VSD | Tj=25, ISD=-4A, VGS=0V | -0.88 | -1.2 | V | |
| Source drain current (Body Diode) | ISD | -2.0 | A |
For additional information, please visit our website http://www.chipnobo.com.
2507091655_ChipNobo-AO3401A-CN_C42436837.pdf
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