Compact SOD323 package ChipNobo BAS416115CN diode with performance and wide storage temperature range
Key Attributes
Model Number:
BAS416,115-CN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Recovery Time (trr):
3us
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS416,115-CN
Package:
SOD-323
Product Description
Product Overview
This product is a fast-switching device with a switching speed of less than 3.0 S and a maximum power dissipation of 250mW. It offers high stability, high reliability, and low reverse leakage current. Designed for general use in residential and commercial equipment, it is not intended for sensitive or specialized equipment in areas with sanctions.
Product Attributes
- Brand: ChipNobo
- Package: SOD-323 Small Outline Plastic Package
- Polarity: Color band denotes cathode end
- Mounting Position: Any
- Marking: D4
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Switching Speed | < 3.0 | uS | ||
| Power Dissipation | Pd | 250 | mW | |
| Reverse Voltage | VR | 75 | V | |
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |
| Operating Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Ts | -55-+150 | ||
| Thermal Resistance from Junction to Ambient | RJA | 450 | /W | |
| Average Rectified Current | IO | 200 | mA | |
| Non repetitive Peak Forward Surge Current | IFSM | 4.0 | A | @ tp=1us; TA=25 |
| 1 | A | @ tp=1ms; TA=25 | ||
| 0.5 | A | @ tp=1s; TA=25 | ||
| Reverse Voltage | V(BR) | 100 | V | IR=100uA |
| Reverse Leakage Current | IR | 5 | nA | VR=75V |
| Reverse Leakage Current | IR | 80 | nA | VR=75;Tj=150 |
| Forward Voltage | VF | 0.9 | V | IF=1.0mA |
| Forward Voltage | VF | 1 | V | IF=10mA |
| Forward Voltage | VF | 1.10 | V | IF=50mA |
| Forward Voltage | VF | 1.25 | V | IF=150mA |
| Reverse Recovery Time | TRR | 0.8 | uS | IRR=0.1 X IR |
| Reverse Recovery Time | TRR | 3 | uS | IRR=0.1 X IR |
| Capacitance | CT | 2 | pF | VR=0V, f=1MHZ |
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-BAS416-115-CN_C45369256.pdf
Related Products
NPN Silicon Epitaxial Planar Transistor Slkor BC848C for General Purpose Electronic Applications
Product Overview The BC846~BC848 series are NPN Silicon Epitaxial Planar Transistors. These transistors are designed for general-purpose applications. Product Attributes Brand: SLKORMICRO Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications Model Type BC846 NPN Silicon Epitaxial ...
Slkor DTC143EE
Product OverviewDigital Transistors (NPN) with built-in bias resistors simplify circuit design by eliminating the need for external input resistors. These transistors feature thin-film resistors with complete isolation, allowing for negative biasing and minimizing parasitic effects. They are ideal ...
Power Switching N Channel Enhancement Mode Field Effect Transistor Slkor SL100N03 with Low Gate Charge
Product OverviewThe SL100N03 is an N-Channel Enhancement Mode Field Effect Transistor designed for power switching applications. It offers excellent package for good heat dissipation, ultra low gate charge, low reverse transfer capacitance, and fast switching capability. Avalanche energy is ...
Power Management Device SLkor SL10N06A Trench Power MV MOSFET Featuring Low RDS ON and Thermal Package
Product OverviewThe SL10N06A is a Trench Power MV MOSFET featuring a high-density cell design for low RDS(ON) and an excellent package for heat dissipation. It is designed for applications such as DC-DC converters and power management functions.Product AttributesBrand: SLKOR MicroModel: SL10N06ATech...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
