Small outline SOT 723 package CYSTECH MTN003N02Y3 20V N Channel Enhancement Mode MOSFET for drive requirements
Key Attributes
Model Number:
MTN003N02Y3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
560mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@4V
Gate Threshold Voltage (Vgs(th)):
1.2V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
60pF@10V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
760pC@4.5V
Mfr. Part #:
MTN003N02Y3
Package:
SOT-723
Product Description
Product Overview
The MTN003N02Y3 is a 20V N-Channel Enhancement Mode MOSFET from CYStek, designed for simple drive requirements and featuring a small package outline. It offers ESD protected gate and is Pb-free lead plating and halogen-free. This MOSFET is suitable for various electronic applications requiring efficient power switching.
Product Attributes
- Brand: CYStek
- Origin: Taiwan (implied by CYStech Electronics Corp.)
- Material: Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Lead: Pure tin plated.
- Certifications: RoHS compliant and green compound products (indicated by 'G' in ordering information)
- Package Type: SOT-723
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current @ TA=25°C, VGS=4.5V | ID | 560 | mA | (Note 3) | ||
| Continuous Drain Current @ TA=85°C, VGS=4.5V | ID | 400 | mA | (Note 3) | ||
| Pulsed Drain Current | IDM | 2.5 | A | (Notes 1, 2) | ||
| Maximum Power Dissipation @ TA=25°C | PD | 150 | mW | (Note 3) | ||
| Maximum Power Dissipation @ TA=85°C | PD | 80 | mW | (Note 3) | ||
| ESD susceptibility (Human body model) | 2000 | V | (Note 4) | |||
| Operating Junction and Storage Temperature | Tj, Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | - | - | V | VGS=0, ID=250μA |
| Gate-Source Leakage Current | IGSS | - | - | ±10 | μA | VGS=±8V, VDS=0 |
| Drain-Source Leakage Current | IDSS | - | - | 1 | μA | VDS=20V, VGS=0 |
| Drain-Source Leakage Current @ Tj=70°C | IDSS | - | - | 10 | μA | VDS=16V, VGS=0 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.92 | 1.2 | V | VDS=10V, ID=1mA |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 290 | 400 | mΩ | VGS=4V, ID=300mA |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 440 | 600 | mΩ | VGS=2.5V, ID=300mA |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 845 | 1200 | mΩ | VGS=1.8V, ID=300mA |
| Forward Transconductance | GFS | - | 0.9 | - | S | VDS=10V, ID=300mA |
| Input Capacitance | Ciss | - | 60 | - | pF | VDS=10V, VGS=0, f=1MHz |
| Output Capacitance | Coss | - | 14 | - | pF | VDS=10V, VGS=0, f=1MHz |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | VDS=10V, VGS=0, f=1MHz |
| Turn-on Delay Time | td(ON) | - | 5 | - | ns | VDS=10V, ID=150mA, VGS=4V, RG=10Ω |
| Rise Time | tr | - | 5 | - | ns | VDS=10V, ID=150mA, VGS=4V, RG=10Ω |
| Turn-off Delay Time | td(OFF) | - | 24 | - | ns | VDS=10V, ID=150mA, VGS=4V, RG=10Ω |
| Fall Time | tf | - | 18 | - | ns | VDS=10V, ID=150mA, VGS=4V, RG=10Ω |
| Total Gate Charge | Qg | - | 0.76 | - | nC | VDS=10V, ID=250mA, VGS=4.5V |
| Gate-Source Charge | Qgs | - | 0.074 | - | nC | VDS=10V, ID=250mA, VGS=4.5V |
| Gate-Drain Charge | Qgd | - | 0.27 | - | nC | VDS=10V, ID=250mA, VGS=4.5V |
| Diode Forward Voltage | VSD | - | 0.75 | 1.2 | V | VGS=0V, IS=100mA |
2410121618_CYSTECH-MTN003N02Y3_C373445.pdf
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