High voltage MOSFET Chongqing Pingwei Tech 5N70GS N Channel Super Junction 700 Volt 5 Amp transistor

Key Attributes
Model Number: 5N70GS
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
3.5pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
460pF@50V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
10nC@480V
Mfr. Part #:
5N70GS
Package:
TO-252
Product Description

Product Overview

The 5N70GS is a high-performance N-Channel Super Junction Power MOSFET designed for demanding applications. It offers a robust combination of 5 Amps and 700 Volts with a maximum RDS(ON) of 1.2 at VGS=10V/2.5A. Key features include low gate charge, low Ciss, fast switching speeds, and 100% avalanche tested for enhanced reliability. Its improved dv/dt capability makes it suitable for various power electronics applications where efficiency and robustness are critical.

Product Attributes

  • Brand: Perfectway
  • Model: 5N70GS
  • Package: TO-252
  • Technology: N-Channel Super Junction Power MOSFET
  • Origin: www.perfectway.cn

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDSS 700 V
Gate-Source Voltage VGSS 30 V
Continuous Drain Current ID 5 A
Pulsed Drain Current (Note1) IDM 15 A
Single Pulse Avalanche Energy (Note 2) EAS 30 mJ
Avalanche Current (Note1) IAR 2.5 A
Repetitive Avalanche Energy (Note1) EAR 0.4 mJ
Reverse Diode dV/dt (Note 3) dv/dt 15 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 +150
Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260
Thermal Characteristics
Maximum Junction-to-Case RthJC 2.75 /W
Maximum Power Dissipation PD TC=25 45 W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 700 - - V
Breakdown Temperature Coefficient BVDSS /TJ Reference to 25 ID=250uA - 0.6 - V/
Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V - - 1 A
Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V - - 1 A
Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V - - -1 A
Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 - 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2.5A - 1.0 1.2
Dynamic Characteristics
Input Capacitance Ciss VDS=50V,VGS=0V, f=1.0MHZ - 460 - pF
Output Capacitance Coss - 45 - pF
Reverse Transfer Capacitance Crss - 3.5 - pF
Switching Characteristics
Turn-On Delay Time td(on) VDD=380V,ID=5A, RG=18 (Note4,5) - 6 - ns
Turn-On Rise Time tr - 3 - ns
Turn-Off Delay Time td(off) - 50 - ns
Turn-Off Fall Time tf - 9 - ns
Total Gate Charge Qg VDS=480V,ID=5A, VGS=10V, (Note4,5) - 10 - nC
Gate-Source Charge Qgs - 1.6 - nC
Gate-Drain Charge Qgd - 4.0 - nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Continuous Diode Forward Current IS - - 5 A
Pulsed Diode Forward Current ISM - - 15 A
Diode Forward Voltage VSD IS=5A,VGS=0V - - 1.3 V
Reverse Recovery Time trr VGS=0V,IS=5A, dIF/dt=100A/us, (Note4) - 250 - ns
Reverse Recovery Charge Qrr - 2.2 - C

Package Outline Dimensions

TO-252

Dim Min Max Unit
A .230 .246 (5.85)
B .250 .264 (6.75)
C .207 .218 (5.54)
D .037 .045 (1.14)
E .106 .138 (3.50)
F .028 .033 (0.84)
G .024 .041 (1.05)
H .028 .043 (1.10)
I .085 .096 (2.45)
J .037 .047 (1.20)
K .018 .026 (0.65)
L .018 .024 (0.60)
P .081 .094 (2.40)
M .000 .006 (0.15)
N -- .008 (0.20)
a 0 10

2410122028_Chongqing-Pingwei-Tech-5N70GS_C432625.pdf

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