High voltage MOSFET Chongqing Pingwei Tech 5N70GS N Channel Super Junction 700 Volt 5 Amp transistor
Product Overview
The 5N70GS is a high-performance N-Channel Super Junction Power MOSFET designed for demanding applications. It offers a robust combination of 5 Amps and 700 Volts with a maximum RDS(ON) of 1.2 at VGS=10V/2.5A. Key features include low gate charge, low Ciss, fast switching speeds, and 100% avalanche tested for enhanced reliability. Its improved dv/dt capability makes it suitable for various power electronics applications where efficiency and robustness are critical.
Product Attributes
- Brand: Perfectway
- Model: 5N70GS
- Package: TO-252
- Technology: N-Channel Super Junction Power MOSFET
- Origin: www.perfectway.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 700 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulsed Drain Current (Note1) | IDM | 15 | A | |||
| Single Pulse Avalanche Energy (Note 2) | EAS | 30 | mJ | |||
| Avalanche Current (Note1) | IAR | 2.5 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 0.4 | mJ | |||
| Reverse Diode dV/dt (Note 3) | dv/dt | 15 | V/ns | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds | TL | 260 | ||||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Case | RthJC | 2.75 | /W | |||
| Maximum Power Dissipation | PD | TC=25 | 45 | W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 700 | - | - | V |
| Breakdown Temperature Coefficient | BVDSS /TJ | Reference to 25 ID=250uA | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current,Forward | IGSSF | VGS=30V,VDS=0V | - | - | 1 | A |
| Gate-Body Leakage Current,Reverse | IGSSR | VGS=-30V,VDS=0V | - | - | -1 | A |
| Gate-Source Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | - | 4 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=2.5A | - | 1.0 | 1.2 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V, f=1.0MHZ | - | 460 | - | pF |
| Output Capacitance | Coss | - | 45 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 3.5 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=380V,ID=5A, RG=18 (Note4,5) | - | 6 | - | ns |
| Turn-On Rise Time | tr | - | 3 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 50 | - | ns | |
| Turn-Off Fall Time | tf | - | 9 | - | ns | |
| Total Gate Charge | Qg | VDS=480V,ID=5A, VGS=10V, (Note4,5) | - | 10 | - | nC |
| Gate-Source Charge | Qgs | - | 1.6 | - | nC | |
| Gate-Drain Charge | Qgd | - | 4.0 | - | nC | |
| Drain-Source Body Diode Characteristics and Maximum Ratings | ||||||
| Continuous Diode Forward Current | IS | - | - | 5 | A | |
| Pulsed Diode Forward Current | ISM | - | - | 15 | A | |
| Diode Forward Voltage | VSD | IS=5A,VGS=0V | - | - | 1.3 | V |
| Reverse Recovery Time | trr | VGS=0V,IS=5A, dIF/dt=100A/us, (Note4) | - | 250 | - | ns |
| Reverse Recovery Charge | Qrr | - | 2.2 | - | C | |
Package Outline Dimensions
TO-252
| Dim | Min | Max | Unit |
|---|---|---|---|
| A | .230 | .246 | (5.85) |
| B | .250 | .264 | (6.75) |
| C | .207 | .218 | (5.54) |
| D | .037 | .045 | (1.14) |
| E | .106 | .138 | (3.50) |
| F | .028 | .033 | (0.84) |
| G | .024 | .041 | (1.05) |
| H | .028 | .043 | (1.10) |
| I | .085 | .096 | (2.45) |
| J | .037 | .047 | (1.20) |
| K | .018 | .026 | (0.65) |
| L | .018 | .024 | (0.60) |
| P | .081 | .094 | (2.40) |
| M | .000 | .006 | (0.15) |
| N | -- | .008 | (0.20) |
| a | 0 | 10 |
2410122028_Chongqing-Pingwei-Tech-5N70GS_C432625.pdf
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