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quality General purpose NPN transistor Comchip SS8050-G suitable for various electronic circuit applications factory
quality General purpose NPN transistor Comchip SS8050-G suitable for various electronic circuit applications factory

General purpose NPN transistor Comchip SS8050-G suitable for various electronic circuit applications

Key Attributes
Model Number: SS8050-G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050-G
Package:
SOT-23
Product Description

Product Overview

The SS8050-G is a general-purpose NPN transistor designed for a wide range of applications. It offers robust performance with key electrical characteristics suitable for various electronic circuits. This transistor is RoHS compliant, indicating adherence to environmental standards.

Product Attributes

  • Brand: Comchip Technology CO., LTD.
  • Model: SS8050-G
  • Type: NPN Transistor
  • Compliance: RoHS
  • Package Type: SOT-23
  • Marking Code: XX (Product type marking code)

Technical Specifications

Symbol Parameter Conditions Min Max Unit
Maximum Ratings (at TA=25C unless otherwise noted)
VCEO Collector-Emitter voltage 25 V
VCBO Collector-Base voltage 40 V
VEBO Emitter-Base voltage 5 V
IC Collector current 1.5 A
PC Collector power dissipation 300 mW
RJA Thermal resistance from junction to ambient 417 C/W
TJ Junction temperature 150 C
Tstg Storage temperature -55 +150 C
Electrical Characteristics (at TA=25C unless otherwise noted)
V(BR)CBO Collector-Base breakdown voltage IC =100A , IE=0 25 V
V(BR)CEO Collector-Emitter breakdown voltage IC =0.1mA , IB=0 40 V
V(BR)EBO Emitter-Base breakdown voltage IE =100A , IC=0 5 V
ICBO Collector cut-off current VCB=40V , IE=0 0.1 A
ICEO Collector cut-off current VE=20V , IE=0 0.5 A
VCE(sat) Collector-Emitter saturation voltage IC=800mA , IB=80mA 1.2 V
fT Transition frequency VCE=10V, IC=50mA, f=30MHz 300 MHz
hFE(1) DC current gain VCE=1V , IC=100mA 200
hFE(2) DC current gain VCE=1V , IC=800mA 40 100
VBE(sat) Base-Emitter saturation voltage IC=800mA , IB=80mA 1.2 V
IEBO Emitter cut-off current VEB=5V , IC=0 0.1 A
Dimensions (SOT-23)
Symbol (mm) (inch)
A 12.30 1.00 0.484 0.039
B 8.00 + 0.30 /0.10 0.315 + 0.012 /0.004
C 1.50 0.10 0.059 0.004
D 13.00 1.00 0.512 0.039
D1 178.00 2.00 7.087 0.079
D2 0.031 (0.80)
E 0.024 (0.60)
F 0.075 (1.90)
P 4.00 0.10 0.157 0.004
P0 4.00 0.10 0.157 0.004
P1 2.00 0.10 0.079 0.004
W 3.50 0.10 0.138 0.004
W1 1.75 0.10 0.069 0.004
Packaging
Standard Packaging Case Type Reel Size (inch) Reel Pack Size (pcs)
SOT-23 7 3,000

2410121811_Comchip-SS8050-G_C3199946.pdf

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