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quality High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability factory
quality High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability factory

High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability

Key Attributes
Model Number: AO3404A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
42mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
820pF
Mfr. Part #:
AO3404A
Package:
SOT-23
Product Description

Product Overview

This high-density cell design MOSFET offers extremely low RDS(on) and exceptional on-resistance and maximum DC current capability, making it ideal for load/power switching and interfacing applications. Designed for reliability, it features a SOT-23 package with UL 94V-0 flammability rating and allows for any mounting position.

Product Attributes

  • Package: SOT-23 Small Outline Plastic Package
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any
  • Brand: ChipNobo (implied by website and contact information)

Technical Specifications

Parameters Symbol Test Condition Min Typ Max Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 5.8 A
Drain Current-Pulsed (note 1) IDM 30 A
Junction Temperature Tj 150
Storage Temperature Tstg -50 +150
Thermal Resistance From Junction to Ambient (note 2) RJA 357 /W
Electrical Characteristics (TA = 25 unless otherwise specified)
Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V
Zero Gate Voltage Drain current IDSS VDS=30V, VGS=0V 1 uA
Gate-body Leakage IGSS VDS=20V, VDS=0V 100 nA
On characteristics
Drain-Source On-Resistance (note 3) RDS(ON) VGS=10V, ID=5.8A 23 30 m
Drain-Source On-Resistance (note 3) RDS(ON) VGS=4.5V, ID=4.8A 31 42 m
Forward transconductance gfs VDS=5V, ID=5.8A 5 S
Gate-Threshold voltage* VGS(th) VDS=VGS, ID=250uA 1.0 1.4 3.0 V
Dynamic characteristics (note 4,5)
Input capacitance Ciss VDS=15V, VGS=0V, f=1MHz 820 pF
Output capacitance Coss VDS=15V, VGS=0V, f=1MHz 118 pF
Reverse Transfer capacitance Crss VDS=15V, VGS=0V, f=1MHz 85 pF
Gate resistance Rg VDS=0V, VGS=0V, f=1MHz 1.5
Switching characteristics (note 4,5)
Turn-on Time td(on) VGS=10V, RL=2.6, VDS=15V, RGEN=3 6.5 ns
Rise time tr VGS=10V, RL=2.6, VDS=15V, RGEN=3 3.1 ns
Turn-off Time td(off) VGS=10V, RL=2.6, VDS=15V, RGEN=3 15.1 ns
Fall time tf VGS=10V, RL=2.6, VDS=15V, RGEN=3 2.7 ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage VSD IS=1A, VGS=0V 1.0 V

Notes:

  • 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • 2. Surface Mounted on FR4 Board, t<5 sec.
  • 3. Pulse Test: Pulse Width 300us, Duty Cycle2%.
  • 4. Guaranteed by design, not subject to production testing.

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-AO3404A_C42419947.pdf

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