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quality Power Management N Channel MOSFET ChipNobo STB15810 CN with Low On Resistance and RoHS Compliance factory
quality Power Management N Channel MOSFET ChipNobo STB15810 CN with Low On Resistance and RoHS Compliance factory

Power Management N Channel MOSFET ChipNobo STB15810 CN with Low On Resistance and RoHS Compliance

Key Attributes
Model Number: STB15810-CN
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF
Output Capacitance(Coss):
1.012nF
Input Capacitance(Ciss):
6.9nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
118nC@10V
Mfr. Part #:
STB15810-CN
Package:
TO-263
Product Description

Product Overview

The STB15810-CN is a high-performance N-channel MOSFET designed for various power management applications. It utilizes advanced SGT (Shielded Gate Trench) technology, resulting in extremely low on-resistance (RDS(on)) and excellent gate charge product (FOM). This device is RoHS compliant and halogen-free, making it suitable for battery management, motor control and drives, DC/DC converters, and general-purpose applications.

Product Attributes

  • Brand: ChipNobo
  • Technology: Advanced SGT (Shielded Gate Trench)
  • Compliance: RoHS Compliant, Halogen Free

Technical Specifications

Parameter Symbol Note or Test Condition Value Unit
Maximum Ratings (TA= 25C unless otherwise noted)
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 120 A
Peak Drain Current IDM 480 A
Power Dissipation PD 250 W
Avalanche Energy, Single Pulsed EAS (L=0.5mH, Rg=25) 320 mJ
Characteristic Values
Storage temperature Tstg -55 to 150 C
Thermal resistance, junction-ambient Rth(j-a) 60 C/W
Thermal resistance, junction-case Rth(j-c) 0.5 C/W
Electrical Characteristic Values (TA=25C, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250A 100 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate threshold voltage VGS(th) VDS=VGS, ID=250A 2.0 to 4.0 V
Drain-Source on-state resistance RDS(on) VGS=10V, ID=50A 3.2 to 3.7 m
Forward Transconductance gfs VDS=5V, ID=50A 100 S
Internal Gate Resistance RG(int) f=1MHz 2.5
Input Capacitance Ciss VDS=40V, VGS=0V, f=1MHz 6900 pF
Output Capacitance Coss 1012 pF
Reverse Transfer Capacitance Crss 33 pF
Characteristic Values
Total Gate Charge Qg VDS=50V, ID=50A, VGS=10V, f=1MHz 118 nC
Gate-Source Charge Qgs 41 nC
Gate-Drain Charge Qgd 36 nC
Turn-on delay time td(on) VDD=50V, VGS=10V, RG=3 49 ns
Rise Time tr 55 ns
Turn-off delay time Td(off) 74 ns
Fall time tf 32 ns
Operating junction temperature Tvj -55 to 150 C
Source-Drain Diode characteristics (TA= 25C unless otherwise noted)
Diode forward voltage VSD VGS=0V, ISD=50A 1.2 V
Device Information
Device Type STB15810-CN
Device Marking Y3R2N10H
Package TO-263
Standard Packaging Quantity (SPQ) 800/
Minimum Packaging Quantity (MPQ) 800/Box
Minimum Order Quantity (MOQ) 4000/Carton

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-STB15810-CN_C42436834.pdf

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