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quality Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification factory
quality Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification factory

Energy semiconductor component ChipNobo BSS84AK215CN with low threshold voltage and AECQ101 qualification

Key Attributes
Model Number: BSS84AK,215-CN
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
BSS84AK,215-CN
Package:
SOT-23
Product Description

Product Overview

This product is a highly energy-efficient semiconductor component designed for high-speed switching applications. It features a low threshold voltage and is qualified under AEC-Q101 standards, making it suitable for demanding automotive environments. Its capabilities include DC/DC conversion, and it is packaged in a compact SOT-23 small outline plastic package with a UL 94V-0 flammability rating. Mounting position is flexible, allowing for any orientation.

Product Attributes

  • Brand: ChipNobo (implied by website and contact information)
  • Package Type: SOT-23 Small Outline Plastic Package
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any
  • AEC-Q101 Qualified

Technical Specifications

Parameters Symbol Test Condition Min Typ Max Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source Voltage VDS -50 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID -0.13 A
Pulsed Drain Current (tp<10us) (note1) IDM -0.52 A
Power Dissipation PD 225 mW
Junction Temperature Tj -50 150
Storage Temperature Tstg -50 150
Thermal Resistance From Junction to Ambient (note2) JA 556 /W
Maximum Lead Temperature for Soldering Purposes, Duration for 5 Seconds TL 260
Electrical Characteristics (TA = 25 unless otherwise specified)
Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -50 V
Gate-Threshold voltage (note3) VGS (th) VDS=VGS, ID=-250uA -0.9 -1.6 -2.0 V
Gate-body Leakage IGSS VDS=0V, VGS=20V 5 uA
Zero Gate Voltage Drain current IDSS VDS=-50V, VGS=0V -0.1 uA
VDS=-25V, VGS=0V 10 uA
Drain-Source On-Resistance (note3) RDS(ON) VGS=-5V, ID=-0.1A 5.8 8
VGS=-10V, ID=-0.1A 4.5
Forward trans conductance (note1) gfs VDS=-25V, ID=-0.1A 50 mS
Diode forward voltage VSD IS=0.34A, VGS=0V 1.3 V
Dynamic (note4)
Input capacitance Ciss VDS=5V, VGS=0V,f=1MHz 30 pF
Output capacitance Coss 10 pF
Reverse Transfer capacitance Crss 5 pF
Switching (note3,4)
Turn-on Time td(on) VDD=-15V, RL=50, ID-0.25A 2.5 ns
Rise time tr 1 ns
Turn-off Time td(off) 16 ns
Fall time tf 8 ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Continuous Current IS -0.13 A
Pulsed Current ISM -0.52 A
Diode forward Voltage (note 3) VSD IS=-0.13A, VGS=0V -2.2 V

Notes:

  • 1). Repetitive rating: Pulse width limited by junction temperature.
  • 2). Surface mounted on FR4 board, t 10s
  • 3). Pulse Test: Pulse Width 300us, Duty Cycle2%.
  • 4). Dynamic characteristics are typically measured under specific test conditions and may vary.

For additional information, please visit http://www.chipnobo.com, or consult your nearest Chipnobo sales office.


2507091655_ChipNobo-BSS84AK-215-CN_C42419972.pdf

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