Lead Free PNP Transistor Collective Semiconductor Technology SS8550 Epitaxial Silicon for General Purpose
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
1W
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP Epitaxial Silicon Transistor from Collective Semiconductor Technology Zhongshan Co., Ltd. It is designed for general-purpose applications and features a lead-free construction. This transistor is the complimentary type to the SS8050, offering a collector current of up to 1.5A and a collector power dissipation of 1W at 25 (TO-92 package).
Product Attributes
- Brand: CST (Collective Semiconductor Technology)
- Origin: Zhongshan Co., Ltd.
- Material: Epitaxial Silicon
- Type: PNP Transistor
- Lead Status: Lead(Pb)-Free
- Complimentary to: SS8050
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | Rank |
|---|---|---|---|---|---|---|---|
| Limiting Values | |||||||
| VCBO | Collector-Base Voltage | - | - | - | -40 | V | - |
| VCEO | Collector-Emitter Voltage | - | - | - | -25 | V | - |
| VEBO | Emitter-Base Voltage | - | - | - | -6 | V | - |
| IC | Collector Current | - | - | - | -1.5 | A | - |
| PC | Collector Power Dissipation | TO-92 (TC=25) | - | - | 1.0 | W | - |
| PC | Collector Power Dissipation | SOT-23 (TA=25) | - | - | 0.36 | W | - |
| Tj | Junction Temperature | - | - | - | +150 | - | |
| Tstg | Storage Temperature | - | -55 | - | +150 | - | |
| Electrical Characteristics | |||||||
| BVCBO | Collector-Base Breakdown Voltage | IC =-100uA, IB = 0 | - | - | -40 | V | - |
| BVCEO | Collector-Emitter Breakdown Voltage | IC =-2mA, IE = 0 | - | - | -25 | V | - |
| BVEBO | Emitter-Base Breakdown Voltage | IE =-100uA, IC = 0 | - | - | -6 | V | - |
| ICBO | Collector Cut-off Current | VCB =-35V, IE = 0 | - | - | -100 | nA | - |
| IEBO | Emitter Cut-off Current | VEB =-6V, IC = 0 | - | - | -100 | nA | - |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=-800mA, IB=-80mA | - | - | -0.5 | V | - |
| VBE(sat) | Base-Emitter Saturation Voltage | IC=-800mA, IB=-80mA | - | - | -1.2 | V | - |
| VBE(on) | Base-Emitter On Voltage | VCE=-1V, IC=-10mA | - | -1.0 | - | V | - |
| hFE | DC Current Gain | VCE=-1V, IC=-100mA | 85 | - | 300 | - | B, C, D |
| fT | Current Gain Bandwidth Product | VCE=-10V, IC=-50mA | - | 100 | - | MHz | - |
| Cob | Output Capacitance | VCB=-10V, f = 1MHz | - | - | 15 | pF | - |
| hFE Classification | - | - | - | - | - | - | Range |
| - | - | - | 85-160 | 120-200 | 170-300 | - | - |
Package Outline (TO-92):
| DIM | Inches | Milimeters |
|---|---|---|
| A | 0.175 - 0.205 | 4.45 - 5.20 |
| B | 0.170 - 0.210 | 4.32 - 5.33 |
| C | 0.125 - 0.165 | 3.18 - 4.19 |
| D | 0.015 - 0.020 | 0.38 - 0.50 |
| E | 0.016 - 0.028 | 0.40 - 0.70 |
| F | - 0.043 | - 1.10 |
| G | - 0.050 | - 1.27 |
| H | - 0.091 | - 2.30 |
| J | 0.010 - 0.016 | 0.26 - 0.40 |
| K | 0.500 - 0.591 | 12.7 - 15.0 |
| N | 0.080 - 0.105 | 2.04 - 2.66 |
| P | 0.091 - 0.106 | 2.30 - 2.70 |
| V | - 0.177 | - 4.50 |
Marking: SS8550 CST xxx
TO-92 Tape and Reel:
| DIM | Inches | Milimeters |
|---|---|---|
| P1 | - 0.500 | - 12.7 |
| P0 | - 0.500 | - 12.7 |
| P2 | - 0.250 | - 6.35 |
| F1 | - 0.098 | - 2.50 |
| F2 | - 0.098 | - 2.50 |
| W | - 0.709 | - 18.0 |
| W0 | - 0.236 | - 6.00 |
| W1 | - 0.354 | - 9.00 |
| W2 | - 0.039 | - 1.00 |
| H | - 0.748 | - 19.0 |
| H0 | - 0.630 | - 16.0 |
| D0 | - 0.157 | - 4.00 |
| t0 | - 0.016 | - 0.40 |
| t1 | - 0.008 | - 0.20 |
| P3 | - 0 | - 0 |
Package Outline (SOT-23):
| DIM | Inches | Milimeters |
|---|---|---|
| A | 0.104 - 0.116 | 2.65 - 2.95 |
| B | 0.115 | 2.92 |
| C | 0.075 | 1.90 |
| D | 0.014 - 0.018 | 0.35 - 0.45 |
| E | 0.051 | 1.30 |
| F | 0.043 | 1.10 |
| G | 0.006 | 0.16 |
| H | 0.010 - 0.022 | 0.25 - 0.55 |
2409271403_Collective-Semiconductor-Technology-SS8550_C2984680.pdf
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