Low Profile SMD Ultra Fast Recovery Rectifier Comchip CURMT104-HF with Glass Passivated Chip Junction
Key Attributes
Model Number:
CURMT104-HF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
25A
Reverse Leakage Current (Ir):
5uA@400V
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
400V
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
CURMT104-HF
Package:
SOD-123H
Product Description
Product Overview
The CURMT103-HF Thru. CURMT107-HF series are Low Profile SMD Ultra Fast Recovery Rectifiers designed for high-efficiency applications. They feature a tiny plastic SMD package, high current and surge current capability, and glass-passivated chip junctions for excellent reverse leakage current and thermal resistance. These rectifiers are ideal for low-profile surface-mounted applications to optimize board space.
Product Attributes
- Brand: Comchip Technology CO., LTD.
- Case Type: SOD-123H/MINI SMA
- Certifications: RoHS Device, UL94V-0 rated flame retardant
- Material: Glass passivated chip junction
- Features: Halogen Free, Lead-free part meets RoHS requirements
Technical Specifications
| Parameter | Symbol | CURMT103-HF / CURMT104-HF | CURMT107-HF | Unit | Conditions |
| Max. Repetitive peak reverse voltage | VRRM | 200 | 400 | V | |
| Max. Continuous reverse voltage | VR | 200 | 400 | V | |
| Max. RMS voltage | VRMS | 140 | 280 | V | |
| Max. Forward voltage @ IF=1.0A | VF | 1.0 | 1.0 | V | IF=1.0A |
| Max. Forward surge current 8.3ms singe half sine-wave superimposed on rated load (JEDEC method) | IFSM | 25 | 25 | A | 8.3ms single half sine-wave |
| Max. Reverse current VR=VRRM TJ=25C | IR | 1.00 | 1.00 | A | VR=VRRM, TJ=25C |
| Max. Reverse current VR=VRRM TJ=125C | IR | 1.70 | 1.70 | A | VR=VRRM, TJ=125C |
| Typ. Thermal resistance Junction to ambient air | RJA | 1000 | 1000 | C/W | P.C.B. Mounted on 0.2 * 0.2(5mm*5mm) Copper Pad Areas |
| Operating junction temperature | TJ | 150 | 150 | C | |
| Storage temperature range | TSTG | -65 to +175 | -65 to +175 | C | |
| Diode Junction capacitance | CJ | 20 | 20 | pF | f=1MHz, applied 4V DC reverse voltage |
| Max. Reverse recovery time (note 1) | TRR | 50 | 50 | ns | IF=0.5A, IR=1.0A, IRR=0.25A |
| Model | Max. Forward Rectified Current (IO) | Reverse Voltage (VRRM) | Forward Current (IF) | Reverse Recovery Time (TRR) | Junction Capacitance (CJ) | Unit |
| CURMT103-HF | 1.0 | 200 | 1.0 | 50 | 20 | A/V/A/ns/pF |
| CURMT104-HF | 1.0 | 200 | 1.0 | 50 | 20 | A/V/A/ns/pF |
| CURMT107-HF | 1.0 | 400 | 1.0 | 50 | 20 | A/V/A/ns/pF |
2205111530_Comchip-CURMT104-HF_C3014253.pdf
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