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quality DIODES DDTB122TC 7 F PNP pre biased transistor with lead free plating and built in biasing resistors factory
quality DIODES DDTB122TC 7 F PNP pre biased transistor with lead free plating and built in biasing resistors factory

DIODES DDTB122TC 7 F PNP pre biased transistor with lead free plating and built in biasing resistors

Key Attributes
Model Number: DDTB122TC-7-F
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Output Voltage(VO(on)):
-
Input Resistor:
220Ω
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DDTB122TC-7-F
Package:
SOT-23
Product Description

Diodes Incorporated DDTB (LO-R1) C PNP PRE-BIASED Transistor

The Diodes Incorporated DDTB (LO-R1) C series is a PNP pre-biased surface mount transistor featuring epitaxial planar die construction and built-in biasing resistors. It offers a complementary NPN type (DDTD) and is designed as a "Green" device, compliant with RoHS standards, being lead, halogen, and antimony free. This transistor is suitable for various electronic applications requiring a compact and reliable pre-biased PNP transistor.

Product Attributes

  • Brand: Diodes Incorporated
  • Type: PNP PRE-BIASED Surface Mount Transistor
  • Construction: Epitaxial Planar Die
  • Certifications: RoHS Compliant ("Green" Device)
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Lead Finish: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe)
  • Case: SOT-23

Technical Specifications

Part NumberR1 (NOM)R2 (NOM)Type CodeVCC (MAX)VIN (MAX)VEBO (MAX)IC (MAX)PD (MAX)RJATJ, TSTG
DDTB122LC0.22K10KP75-50 V+5 to -6 V-5 V-500 mA200 mW625 C/W-55 to +150 C
DDTB142JC0.47K10KP76-50 V+5 to -6 V-5 V-500 mA200 mW625 C/W-55 to +150 C
DDTB122TC0.22KOPENP77-50 V-5 V-5 V-500 mA200 mW625 C/W-55 to +150 C
DDTB142TC0.47KOPENP78-50 V-5 V-5 V-500 mA200 mW625 C/W-55 to +150 C

Electrical Characteristics

CharacteristicSymbolTest ConditionDDTB122LC/DDTB142JCDDTB122TC/DDTB142TCUnit
Input Voltage (off)Vl(off)VCC = -5V, IO = -100A-0.3-V
Input Voltage (on)Vl(on)VO = -0.3V, IO = -20mA--2.0V
Output Voltage (on)VO(on)IO/Il = -50mA/-2.5mA-0.3-V
Input CurrentIlVI = -5V-28-13mA
Output Current (off)IO(off)VCC = -50V, VI = 0V-0.5-A
DC Current GainGlVO = -5V, IO = -50mA56--
Gain-Bandwidth Product*fTVCE = -10V, IE = -5mA, f = 100MHz200-MHz
Collector-Base Breakdown VoltageBVCBOIC = -50A-50-V
Collector-Emitter Breakdown VoltageBVCEOIC = -1mA-40-V
Emitter-Base Breakdown VoltageBVEBOIE = -50A--5V
Collector Cutoff CurrentICBOVCB = -50V-0.5-A
Emitter Cutoff CurrentIEBOVEB = -4V--0.5A
Collector-Emitter Saturation VoltageVCE(sat)IC = -50mA, IB = -2.5mA-0.3-V
DC Current Transfer RatiohFEIC = -5mA, VCE = -5V-100 to 600-
Gain-Bandwidth Product*fTVCE = -10V, IE = 5mA, f = 100MHz-200MHz

2409291036_DIODES-DDTB122TC-7-F_C460197.pdf

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