Complementary Pre Biased Transistor with SOT363 Package DIODES DCX144EUQ 7R F and 50V Supply Voltage

Key Attributes
Model Number: DCX144EUQ-7R-F
Product Custom Attributes
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DCX144EUQ-7R-F
Package:
SOT-363
Product Description

Product Overview

The DCX (XXXX) U series are complementary pre-biased transistors in a SOT363 surface-mount package, designed for automated assembly. They offer a supply voltage of 50V and a range of bias resistors, making them suitable for various applications. These devices are lead-free, RoHS compliant, and halogen/antimony-free ("Green"). The "Q" variants are AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making them suitable for automotive applications with specific change control requirements.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT363
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: AEC-Q101 (for "Q" variants), PPAP capable (for "Q" variants), IATF 16949 certified facilities (for "Q" variants)
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

Part NumberR1 (NOM)R2 (NOM)Supply Voltage (VO)Input Voltage (VI) Range (NPN)Output Current (IO) (NPN)Input Voltage (VI) Range (PNP)Output Current (IO) (PNP)Package
DCX124EU22k22k50V-10 to +40V30mA+10 to -40V-30mASOT363
DCX144EU47k47k50V-10 to +40V30mA+10 to -40V-30mASOT363
DCX114YU10k47k50V-6 to +40V70mA+6 to -40V-70mASOT363
DCX123JU2.2k47k50V-5 to +12V100mA+5 to -12V-100mASOT363
DCX114EU10k10k50V-10 to +40V50mA+10 to -40V-50mASOT363
DCX143EU4.7k4.7k50V-10 to +40V100mA+10 to -40V-100mASOT363
DCX143ZU4.7k47k50V-10 to +30V (Max)100mA+10 to -30V (Max)-100mASOT363
DCX115EU100k100k50V-10 to +40V20mA+10 to -40V-20mASOT363
DCX143TU4.7kR1 Only50V-5V Max100mA+5V Max-100mASOT363
DCX114TU10kR1 Only50V-5V Max100mA+5V Max-100mASOT363
CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown Voltage (NPN)BVCBO50VIC = 50A
Collector-Emitter Breakdown Voltage (NPN)BVCEO50VIC = 1mA
Emitter-Base Breakdown Voltage (NPN)BVEBO5VIE = 50A
Collector Cutoff Current (NPN)ICBO0.5AVCB = 50V
Emitter Cutoff Current (NPN)IEBO0.5AVEB = 4V
Collector-Emitter Saturation Voltage (NPN)VCE(sat)0.3VIC/IB = 2.5mA / 0.25mA (DCX143TU), IC/IB = 1mA / 0.1mA (DCX114TU)
DC Current Transfer Ratio (NPN)hFE100-600IC = 1mA, VCE = 5V
Input Resistor (R1) ToleranceR1-30 to +30%
Gain-Bandwidth ProductfT250MHzVCE = 10V, IE = 5mA, f = 100MHz
Collector-Base Breakdown Voltage (PNP)BVCBO-50VIC = -50A
Collector-Emitter Breakdown Voltage (PNP)BVCEO-50VIC = -1mA
Emitter-Base Breakdown Voltage (PNP)BVEBO-5VIE = -50A
Collector Cutoff Current (PNP)ICBO-0.5AVCB = -50V
Emitter Cutoff Current (PNP)IEBO-0.5AVEB = -4V
Collector-Emitter Saturation Voltage (PNP)VCE(sat)-0.3VIC/IB = 2.5mA / 0.25mA (DCX143TU), IC/IB = 1mA / 0.1mA (DCX114TU)
DC Current Transfer Ratio (PNP)hFE100-600IC = -1mA, VCE = -5V
Power DissipationPD200mW@ TA = +25C (Mounted on FR-4 PC Board)
Thermal Resistance, Junction to Ambient AirRJA625C/W(Note 6)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

2412251021_DIODES-DCX144EUQ-7R-F_C19949216.pdf

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