Switching Device DDF 2P4M-TO-252 SCR with Sensitive Gate Trigger Current and Low Holding Current
Key Attributes
Model Number:
2P4M-TO-252
Product Custom Attributes
Mfr. Part #:
2P4M-TO-252
Package:
TO-252
Product Description
SCR 2P4M
The SCR 2P4M is a silicon controlled rectifier designed for various switching applications. It features a sensitive gate trigger current, low reverse and forward blocking current, and low holding current. Its glass-passivated surface ensures reliability and uniformity. This SCR is widely used in universal switches, small motor controllers, color lamp controllers, leakage protectors, lamp relays, line power control of exciters, logic integrated circuit drives, high-power thyristor gate drives, and motorcycle igniters.
Product Attributes
- Brand: Shenzhen DingDeFeng Technology Co.,Ltd
- Origin: Shenzhen
- Model: 2P4M
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Repetitive Peak Off-State Voltages | VDRM/VRRM | 600 | V | ||
| RMS on-State Current | IT(RMS) | 2.0 | A | ||
| Non-Repetitive Peak On-State Current | ITSM | 20 | A | ||
| Operating Junction Temperature | Tj | 125 | |||
| Storage Temperature | Tstg | -40~150 | |||
| Peak Repetitive Forward or Reverse Blocking Current | IDRM/IRRM | VAK = Rated VDRM or VRRM | 0.1 | mA | |
| Peak Forward On-State Voltage | VTM | IT=2.0A | 1.7 | V | |
| Gate Trigger Current | IGT | VD=12V, RL=100 | 200 | A | |
| Gate Trigger Voltage | VGT | VD=12V, RL=100 | 0.9 | V | |
| Gate Non-Trigger Voltage | VGD | VD=1/2 VDRM | 0.2 | ---- | V |
| Holding Current | IH | IT=50mA | 5 | mA | |
| Latch Current | IL | IG=1.2IGT | 6 | mA | |
| Critical Rate of Rise of Off-State Voltage | dv/dt | VDM=67%VDRMTj=110 | 10 | V/S |
Pin Assignment
| Package | Pin 1 | Pin 2 | Pin 3 |
| TO-126 | K | A | G |
| TO-252 | K | A | G |
| SOT-89 | K | A | G |
| SOT-223 | K | A | G |
2509011105_DDF-2P4M-TO-252_C50229477.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
