86--136 6733 2386
quality High Current SMD Bridge Rectifier Comchip DF10S-G with Plastic UL 94V-0 Material and Marked Polarity factory
quality High Current SMD Bridge Rectifier Comchip DF10S-G with Plastic UL 94V-0 Material and Marked Polarity factory

High Current SMD Bridge Rectifier Comchip DF10S-G with Plastic UL 94V-0 Material and Marked Polarity

Key Attributes
Model Number: DF10S-G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DF10S-G
Package:
DF-S
Product Description

Product Overview

The DF005S-G thru DF10S-G series are SMD Glass Passivated Bridge Rectifiers designed for high-reliability applications. They offer a reverse voltage range from 50V to 1000V and a forward current of 1.0A. Key features include a low forward voltage drop, high current capability, and suitability for printed circuit board mounting. These rectifiers are ideal for various electronic circuits requiring efficient rectification.

Product Attributes

  • Brand: Comchip Technology CO., LTD.
  • Certifications: UL recognized file # E349301
  • Material: Plastic material with UL flammability classification 94V-0
  • Polarity: As marked on Body
  • Weight: 0.38 grams
  • Mounting Position: Any
  • RoHS: RoHS Device

Technical Specifications

Part NumberReverse Voltage (V)Forward Current (A)Peak Surge Current (A)Forward Voltage (V)Reverse Current (A)Operating Temp (C)Storage Temp (C)Thermal Resistance (C/W)Junction Capacitance (pF)
DF005S-G501.030 (8.3ms)1.1 (at 1.0A)500 (at 50V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF01S-G1001.030 (8.3ms)1.1 (at 1.0A)500 (at 100V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF02S-G2001.030 (8.3ms)1.1 (at 1.0A)500 (at 200V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF04S-G4001.030 (8.3ms)1.1 (at 1.0A)500 (at 400V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF06S-G6001.030 (8.3ms)1.1 (at 1.0A)500 (at 600V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF08S-G8001.030 (8.3ms)1.1 (at 1.0A)500 (at 800V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)
DF10S-G10001.030 (8.3ms)1.1 (at 1.0A)500 (at 1000V, 25C)-55 to +150-55 to +150403.735 (at 1MHz, 4V)

2410121844_Comchip-DF10S-G_C3013436.pdf

Related Products
quality power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW factory
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.