High dielectric strength bridge rectifier DIODES GBJ804-F designed for robust electronic applications
Key Attributes
Model Number:
GBJ804-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
170A
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - Forward(Vf@If):
1V@4A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
400V
Mfr. Part #:
GBJ804-F
Package:
GBJ
Product Description
Diodes Incorporated GBJ8005 - GBJ810 8.0A Glass Passivated Bridge Rectifier
The GBJ8005 - GBJ810 series are 8.0A glass passivated bridge rectifiers designed for printed circuit board applications. They feature high case dielectric strength, low reverse leakage current, and a surge overload rating to 170A peak, making them ideal for various electronic circuits requiring efficient rectification.
Product Attributes
- Brand: Diodes Incorporated
- Series: GBJ8005 - GBJ810
- Construction: Glass Passivated Die
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020C
- Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 (Lead Free Plating - Tin Finish)
- Polarity: Molded on Body
- Mounting: Through Hole for #6 Screw
- Mounting Torque: 5.0 in-lbs Maximum
- Marking: Type Number
- Certifications: UL Listed Under Recognized Component Index, File Number E94661
- Compliance: Lead Free Finish/RoHS Compliant (Note 4)
Technical Specifications
| Characteristic | Symbol | GBJ8005 | GBJ801 | GBJ802 | GBJ804 | GBJ806 | GBJ808 | GBJ810 | Unit |
|---|---|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage | VRRM, VRWM, VR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Forward Rectified Output Current @ TC = 110 C | IO | 8.0 | A | ||||||
| Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load | IFSM | 170 | A | ||||||
| Forward Voltage per element @ IF = 4.0A | VFM | 1.0 | V | ||||||
| Peak Reverse Current @ TC = 25 C at Rated DC Blocking Voltage | IR | 5.0 | µA | ||||||
| Peak Reverse Current @ TC = 125 C at Rated DC Blocking Voltage | IR | 500 | µA | ||||||
| I2t Rating for Fusing (t < 8.3ms) (Note 1) | I2t | 120 | A2s | ||||||
| Typical Total Capacitance per Element (Note 2) | CT | 55 | pF | ||||||
| Typical Thermal Resistance Junction to Case (Note 3) | R JC | 1.6 | °C/W | ||||||
| Operating and Storage Temperature Range | Tj, TSTG | -65 to +150 | °C | ||||||
Mechanical Dimensions (mm)
| Dim | Min | Max |
|---|---|---|
| A | 29.70 | 30.30 |
| B | 19.70 | 20.30 |
| C | 17.00 | 18.00 |
| D | 3.80 | 4.20 |
| E | 7.30 | 7.70 |
| G | 9.80 | 10.20 |
| H | 2.00 | 2.40 |
| I | 0.90 | 1.10 |
| J | 2.30 | 2.70 |
| K | 3.0 | X 45° |
| L | 4.40 | 4.80 |
| M | 3.40 | 3.80 |
| N | 3.10 | 3.40 |
| P | 2.50 | 2.90 |
| R | 0.60 | 0.80 |
| S | 10.80 | 11.20 |
2005271102_DIODES-GBJ804-F_C526645.pdf
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