High Surge Overload Rating DIODES GBU808 Bridge Rectifier Suitable for Resistive and Inductive Loads
Key Attributes
Model Number:
GBU808
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1V@4.0A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
GBU808
Package:
GBU
Product Description
Diodes Incorporated GBU8005 - GBU810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER
The GBU8005 - GBU810 series are glass-passivated bridge rectifiers designed for single-phase, 60Hz applications with resistive or inductive loads. They offer high case dielectric strength, low reverse leakage current, and a surge overload rating up to 200A peak, making them ideal for printed circuit board applications. These rectifiers are UL Listed and RoHS Compliant.
Product Attributes
- Brand: Diodes Incorporated
- Product Series: GBU8005 - GBU810
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020C
- Terminals Finish: Tin, Solderable per MIL-STD-202, Method 208
- Polarity: Marked on Body
- Mounting: Through Hole for #6 Screw
- Certifications: UL Listed Under Recognized Component Index, File Number E94661
- Lead Free Finish: RoHS Compliant (Note 4)
Technical Specifications
| Characteristic | Symbol | GBU8005 | GBU801 | GBU802 | GBU804 | GBU806 | GBU808 | GBU810 | Unit |
|---|---|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Forward Rectified Current (Note 1) @ TC = 100 C | I(AV) | 8.0 | A | ||||||
| Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load | IFSM | 200 | A | ||||||
| Forward Voltage (per element) @ IF = 4.0A | VFM | 1.0 | V | ||||||
| Peak Reverse Current @ TC = 25 C at Rated DC Blocking Voltage | IR | 5.0 | µA | ||||||
| Peak Reverse Current @ TC = 125 C at Rated DC Blocking Voltage | IR | 500 | µA | ||||||
| I2t Rating for Fusing (t < 8.3ms) (Note 2) | I2t | 166 | A²s | ||||||
| Typical Total Capacitance per Element (Note 3) | CT | 130 | pF | ||||||
| Typical Thermal Resistance Junction to Case (Note 1) | RJC | 2.2 | °C/W | ||||||
| Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 | °C | ||||||
2308101548_DIODES-GBU808_C3589479.pdf
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