SOT23 Package PNP Transistor 500V Collector Voltage DIODES FMMT560TA Ideal for High Voltage Circuits
Key Attributes
Model Number:
FMMT560TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
60MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
500V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT560TA
Package:
SOT-23
Product Description
FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
The FMMT560 is a 500V PNP high voltage transistor in a SOT23 package. It offers a continuous collector current of up to -150mA and peak pulse current up to -500mA, with excellent hFE characteristics up to -100mA. This device is AEC-Q101 qualified, making it suitable for high reliability applications. It is also RoHS compliant, halogen and antimony free, and considered a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101, RoHS compliant, Halogen and Antimony Free ("Green" Device)
- Origin: Not specified in document
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | -500 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -500 | V | IC = -1mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -500V |
| Emitter Cutoff Current | IEBO | -100 | nA | VEB = -5V |
| Static Forward Current Transfer Ratio | hFE | 100 | — | IC = -1mA, VCE = -10V |
| 300 | — | IC = -50mA, VCE = -10V | ||
| 300 | — | IC = -100mA, VCE = -10V | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -200 | mV | IC = -20mA, IB = -2mA |
| -500 | mV | IC = -50mA, IB = -10mA | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -0.9 | V | IC = -50mA, IB = -10mA |
| Base-Emitter Turn-On Voltage | VBE(ON) | -0.9 | V | IC = -50mA, VCE = -10V |
| Output Capacitance | COBO | 8 | pF | VCB = -20V, f = 1MHz |
| Transition Frequency | fT | 60 | MHz | VCE = -20V, IC = -10mA, f = 50MHz |
| Turn-On Time | tON | 110 | ns | VCE = -100V, IC = -50mA, IB1 = -5mA, IB2 = 10mA |
| Turn-Off Time | tOFF | 1.5 | s | VCE = -100V, IC = -50mA, IB1 = -5mA, IB2 = 10mA |
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit | Condition |
| Collector-Base Voltage | VCBO | -500 | V | @TA = +25C |
| Collector-Emitter Voltage | VCEO | -500 | V | @TA = +25C |
| Emitter-Base Voltage | VEBO | -7 | V | @TA = +25C |
| Continuous Collector Current | IC | -150 | mA | @TA = +25C |
| Peak Pulse Current | ICM | -500 | mA | @TA = +25C |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit | Condition |
| Power Dissipation | PD | 500 | mW | (Note 5) @TA = +25C |
| Thermal Resistance, Junction to Ambient | RJA | 250 | C/W | (Note 5) @TA = +25C |
| Thermal Resistance, Junction to Lead | RJL | 194 | C/W | (Note 6) @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | — |
1810221740_DIODES-FMMT560TA_C112348.pdf
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