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quality NPN Silicon Planar Medium Power Darlington Transistors DIODES ZTX605 with Performance in Electronics factory
quality NPN Silicon Planar Medium Power Darlington Transistors DIODES ZTX605 with Performance in Electronics factory

NPN Silicon Planar Medium Power Darlington Transistors DIODES ZTX605 with Performance in Electronics

Key Attributes
Model Number: ZTX605
Product Custom Attributes
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
1W
DC Current Gain:
2000
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-55℃~+200℃@(Tj)
Mfr. Part #:
ZTX605
Package:
TO-92
Product Description

Product Overview

NPN Silicon Planar Medium Power Darlington Transistors designed for general purpose amplification and switching applications. These transistors offer high voltage capabilities, significant current handling, and excellent gain characteristics, making them suitable for a range of electronic circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Planar
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolZTX604 Min.ZTX604 Max.ZTX605 Min.ZTX605 Max.UnitConditions
Collector-Base Breakdown VoltageV(BR)CBO120140VIC=100A
Collector-Emitter Breakdown VoltageV(BR)CEO100120VIC=10mA*
Emitter-Base Breakdown VoltageV(BR)EBO1010VIE=100A
Collector Cut-Off CurrentICBO0.010.01AVCB=100V
Collector Cut-Off CurrentICBO1010AVCB=120V
Collector Cut-Off CurrentICBO0.010.01AVCB=100V,Tamb=100C
Collector Cut-Off CurrentICBO1010AVCB=120V,Tamb=100C
Emitter Cut-Off CurrentIEBO0.10.1AVEB=8V
Collector-Emitter Cut-Off CurrentICES1010AVCES=100V
Collector-Emitter Cut-Off CurrentICES10AVCES=120V
Collector-Emitter Saturation VoltageVCE(sat)1.01.51.01.5VIC=250mA, IB=0.25mA*
Collector-Emitter Saturation VoltageVCE(sat)VIC=1A, IB=1mA*
Base-Emitter Saturation VoltageVBE(sat)1.81.8VIC=1A, IB=1mA*
Base-Emitter Turn-On VoltageVBE(on)1.71.7VIC=1A, VCE=5V*
Static Forward Current Transfer RatiohFE2K5K2K0.5KIC=50mA, VCE=5V
Static Forward Current Transfer RatiohFE100K100KIC=500mA, VCE=5V*
Static Forward Current Transfer RatiohFE2KIC=1A, VCE=5V*
Static Forward Current Transfer RatiohFE0.5KIC=2A, VCE=5V*
Transition FrequencyfT150150MHzIC=100mA, VCE=10V, f=20MHz
Input CapacitanceCibo9090pFVEB=500mV, f=1MHz
Output CapacitanceCobo1515pFVCB=10V, f=1MHz
Switching Timeston0.50.5sIC=500mA, VCE=10V, IB1=IB2=0.5mA
Switching Timestoff1.61.6s
Power DissipationPtot11Wat Tamb=25C
Power Dissipation Derating5.75.7mW/Cderate above 25C
Operating and Storage Temperature RangeTj:Tstg-55+200-55+200C
Collector-Base VoltageVCBO120140V
Collector-Emitter VoltageVCEO100120V
Emitter-Base VoltageVEBO1010V
Peak Pulse CurrentICM44A
Continuous Collector CurrentIC11A

1912111437_DIODES-ZTX605_C443658.pdf

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