medium power transistor DIODES 2DB1182Q-13 featuring solderable matte tin plated leads and UL 94V 0 rating
Key Attributes
Model Number:
2DB1182Q-13
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
110MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2DB1182Q-13
Package:
TO-252
Product Description
Product Overview
The 2DB1182Q is a 32V PNP medium power transistor in a TO252 package. It features a high continuous collector current of -2A, a peak pulse current of -3A, and a low collector-emitter saturation voltage. This device is ideal for medium power switching or amplification applications. It is a totally lead-free, fully RoHS compliant, and halogen and antimony-free "Green" device, qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Package: TO252 (DPAK)
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Weight: 0.34 grams (Approximate)
- Certifications: AEC-Q101
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. "Green" Device
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -32 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Continuous Collector Current | IC | -2 | A | |
| Peak Pulse Collector Current | ICM | -3 | A | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 1.2 | W | @TA = +25C |
| Power Dissipation @TL = +25C (Note 6) | PD | 15 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 104 | C/W | |
| Thermal Resistance, Junction to Lead (Note 6) | RJL | 8.3 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings (Note 7) | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -50A, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | -32 | V | IC = -1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -50A, IC = 0 |
| Collector Cutoff Current | ICBO | -1 | A | VCB = -20V, IE = 0 |
| Emitter Cutoff Current | IEBO | -1 | A | VEB = - 4V, IC = 0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.8 | V | IC = -2A, IB = -0.2A |
| DC Current Gain | hFE | 120 to 270 | VCE = -3V, IC = -0.5A | |
| Current Gain-Bandwidth Product | fT | 110 | MHz | VCE = -5V, IC = -0.1A, f = 30MHz |
| Output Capacitance | Cobo | 26 | pF | VCB = -10V, f = 1MHz |
| Turn-On Time | ton | 109 | ns | VCC = 30V, ICC = 150mA, IB1 = - IB2 = 15mA |
| Delay Time | td | 60 | ns | |
| Rise Time | tr | 49 | ns | |
| Turn-Off Time | toff | 280 | ns | |
| Storage Time | ts | 246 | ns | |
| Fall Time | tf | 34 | ns | |
2412251013_DIODES-2DB1182Q-13_C176911.pdf
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