12V transistor DIODES ZXTN25012EFLTA offering high peak current and performance in switching circuits
Key Attributes
Model Number:
ZXTN25012EFLTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
260MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN25012EFLTA
Package:
SOT-23
Product Description
Product Overview
The ZXTN25012EFL is a 12V, SOT23, NPN low power transistor designed with advanced process capability for high current gain hold-up. This makes it ideal for applications requiring high pulse currents. Key features include high peak current, low saturation voltage, and a 6V reverse blocking voltage. It is suitable for MOSFET and IGBT gate driving, DC-DC conversion, LED driving, and interfacing between low voltage ICs and loads.
Product Attributes
- Brand: Zetex
- Package Type: SOT23
- Certifications: ISO 9001, TS16949, RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector-base breakdown voltage | BVCBO | 20 | 40 | V | IC = 100 A | |
| Collector-emitter breakdown voltage | BVCEO | 12 | 17 | V | IC = 10mA (*) | |
| Emitter-base breakdown voltage | BVEBO | 7 | 8.3 | V | IE = 100 A | |
| Emitter-collector breakdown voltage (reverse blocking) | BVECX | 6 | 8 | V | IE = 100 A, RBC 1k or 0.25v > VBC > -0.25V | |
| Emitter-collector breakdown voltage (base open) | BVECO | 4.5 | 5.5 | V | IE = 100 A | |
| Collector cut-off current | ICBO | <1 | 50 | nA | VCB = 16V | |
| Collector cut-off current | ICBO | 20 | A | VCB = 16V, Tamb= 100C | ||
| Emitter-base cut-off current | IEBO | <1 | 50 | nA | VEB = 5.6V | |
| Collector-emitter saturation voltage | VCE(sat) | 50 | 65 | mV | IC = 1A, IB = 100mA(*) | |
| Collector-emitter saturation voltage | VCE(sat) | 70 | 85 | mV | IC = 1A, IB = 10mA(*) | |
| Collector-emitter saturation voltage | VCE(sat) | 105 | 130 | mV | IC = 2A, IB = 40mA(*) | |
| Collector-emitter saturation voltage | VCE(sat) | 235 | 300 | mV | IC = 5A, IB = 100mA(*) | |
| Base-emitter saturation voltage | VBE(sat) | 830 | 950 | mV | IC = 2A, IB = 40mA(*) | |
| Base-emitter turn-on voltage | VBE(on) | 745 | 850 | mV | IC = 2A, VCE = 2V(*) | |
| Static forward current transfer ratio | hFE | 500 | 800 | IC = 10mA, VCE = 2V(*) | ||
| Static forward current transfer ratio | hFE | 500 | 700 | IC = 1A, VCE = 2V(*) | ||
| Static forward current transfer ratio | hFE | 370 | 575 | IC = 2A, VCE = 2V(*) | ||
| Static forward current transfer ratio | hFE | 210 | 335 | IC = 5A, VCE = 2V(*) | ||
| Static forward current transfer ratio | hFE | 30 | 55 | IC = 15A, VCE = 2V(*) | ||
| Transition frequency | fT | 260 | MHz | IC = 50mA, VCE = 10V f = 100MHz | ||
| Output capacitance | Cobo | 25 | 35 | pF | VCB = 10V, f = 1MHz(*) | |
| Delay time | t(d) | 71 | ns | VCC = 10V IC = 1A, IB1 = IB2= 10mA | ||
| Rise time | t(r) | 70 | ns | VCC = 10V IC = 1A, IB1 = IB2= 10mA | ||
| Storage time | t(s) | 233 | ns | VCC = 10V IC = 1A, IB1 = IB2= 10mA | ||
| Fall time | t(f) | 72 | ns | VCC = 10V IC = 1A, IB1 = IB2= 10mA | ||
| Collector-base voltage | VCBO | 20 | V | |||
| Collector-emitter voltage | VCEO | 12 | V | |||
| Emitter-collector voltage | VECO | 4.5 | V | |||
| Emitter-base voltage | VEBO | 7 | V | |||
| Continuous collector current | IC | 2 | A | (a) | ||
| Base current | IB | 500 | mA | |||
| Peak pulse current | ICM | 15 | A | |||
| Power dissipation @ Tamb =25C | PD | 350 | mW | (a) | ||
| Linear derating factor | 2.8 | mW/C | ||||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | C | ||
| Junction to ambient thermal resistance | RJA | 357 | C/W | (a) |
2410010131_DIODES-ZXTN25012EFLTA_C460289.pdf
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