Low Saturation Voltage PNP Transistor DIODES FMMT718TA SOT23 Package Lead Free RoHS Compliant Device
Key Attributes
Model Number:
FMMT718TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT718TA
Package:
SOT-23
Product Description
Product Overview
The FMMT718 is a 20V PNP Silicon Low Saturation Transistor in a SOT23 package. It offers a continuous collector current of -1.5A and a peak pulse current of -6A. Key features include a low saturation voltage (VCE(sat) < -200mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 97m). The transistor is designed for applications requiring high current gain hold-up and is complementary to the NPN type FMMT618. It is available in a "Green" device, meaning it is totally lead-free, fully RoHS compliant, and halogen- and antimony-free. An automotive-compliant part (FMMT718Q) is also available.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded plastic, Green molding compound
- Certifications: Totally Lead-Free & Fully RoHS compliant, Halogen- and Antimony-Free (Green Device)
- Compliance: AEC-Q100/101/200 (for automotive variant), IATF 16949 certified facilities (for automotive variant)
- Origin: Not specified in the provided text
- Color: Not specified in the provided text
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | -20 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -20 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -15V |
| Emitter Cutoff Current | IEBO | -100 | nA | VEB = -4V |
| Collector Emitter Cutoff Current | ICES | -100 | nA | VCE= -15V |
| Static Forward Current Transfer Ratio | hFE | 300-475 | - | IC = -10mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 300-450 | - | IC = -100mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 150-230 | - | IC = -2A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 35-70 | - | IC = -4A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 15-30 | - | IC = -6A, VCE = -2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -16 to -40 | mV | IC =- 0.1A, IB = -10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -130 to -200 | mV | IC = -1A, IB = -20mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -145 to -220 | mV | IC = -1.5A, IB = -50mA |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.81 to -1.0 | V | IC = -2A, VCE = -2V |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.87 to -1.0 | V | IC = -1.5A, IB = -50mA |
| Output Capacitance | Cobo | 34-43 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 150-180 | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Turn-On Time | ton | 68 | ns | VCC = -10V, IC = -1A, IB1 = IB2 = -20mA |
| Turn-Off Time | toff | 270 | ns | VCC = -10V, IC = -1A, IB1 = IB2 = -20mA |
| Continuous Collector Current | IC | -1.5 | A | @ TA = +25C |
| Peak Pulse Current | ICM | -6 | A | @ TA = +25C |
| Power Dissipation | PD | 625 | mW | @ TA = +25C (Note 5) |
| Power Dissipation | PD | 806 | mW | @ TA = +25C (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 200 | C/W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 155 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V |
2412251150_DIODES-FMMT718TA_C74079.pdf
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