SOT223 Package DIODES FZT851TA 60V NPN Medium Power Transistor with Low On Resistance and High Gain Hold Up
Key Attributes
Model Number:
FZT851TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT851TA
Package:
SOT-223
Product Description
Product Overview
The FZT851 is a 60V NPN medium power transistor in a SOT223 package, designed for high continuous collector current (IC = 6A) and peak pulse current (ICM = 20A). It features low saturation voltage (VCE(sat) < 100mV @ 1A) and a low equivalent on-resistance (RCE(sat) = 44m). The transistor offers high gain hold-up with hFE specified up to 10A. It is available in lead-free, RoHS compliant, and "Green" (Halogen and Antimony free) versions. The FZT851Q variant is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: RoHS Compliant, AEC-Q101 Qualified (FZT851Q), IATF16949 Certified (FZT851Q)
- Color: "Green" Device
- Complementary Part: FZT951
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 150 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 6 | A | @TA = +25C |
| Peak Pulse Current | ICM | 20 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 3.0 | W | @TA = +25C (Note 5) |
| Linear Derating Factor | 24 | mW/C | (Note 5) | |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | (Note 5) |
| Thermal Resistance Junction to Lead | RJL | 8.8 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 8,000 | V | JEDEC Class 3B |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | VCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-Off Current | ICBO | <1 | nA | VCB = 120V |
| Collector Cut-Off Current | ICER | <1 | nA | VCE = 120V, RB 1k |
| Emitter Cut-Off Current | IEBO | <1 | nA | VEB = 6V |
| DC Current Gain | hFE | 100 - 200 | IC = 10mA, VCE = 1V | |
| DC Current Gain | hFE | 75 - 120 | IC = 5A, VCE = 1V | |
| DC Current Gain | hFE | 25 - 50 | IC = 10A, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | <100 | mV | IC = 1A, IB = 50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | <375 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Saturation Voltage | VBE(sat) | <1,200 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Turn-On Voltage | VBE(on) | <1,150 | mV | IC = 6A, VCE = 1V |
| Current Gain-Bandwidth Product | ft | 130 | MHz | IC = 100mA, VCE = 10V, f = 50MHz |
| Output Capacitance | Cobo | 45 | pF | VCB = 10V, f = 1MHz |
| Switching Times (Turn-on) | ton | 45 | ns | IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA |
| Switching Times (Turn-off) | toff | 1,100 | ns | IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA |
2412251154_DIODES-FZT851TA_C87950.pdf
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