86--136 6733 2386
quality ADC114EUQ 13 Diodes NPN Pre Biased Dual Transistor With Fully RoHS Compliant Green Molded Plastic factory
quality ADC114EUQ 13 Diodes NPN Pre Biased Dual Transistor With Fully RoHS Compliant Green Molded Plastic factory

ADC114EUQ 13 Diodes NPN Pre Biased Dual Transistor With Fully RoHS Compliant Green Molded Plastic

Key Attributes
Model Number: ADC114EUQ-13
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
ADC114EUQ-13
Package:
SOT-363
Product Description

Product Overview

The ADC114EUQ is an NPN pre-biased dual transistor featuring epitaxial planar die construction and built-in biasing resistors. It is a totally lead-free, fully RoHS compliant, and halogen/antimony-free 'Green' device. This part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Epitaxial Planar Die Construction
  • Material: Molded Plastic, Green Molding Compound (UL Flammability Classification Rating 94V-0)
  • Certifications: AEC-Q101 qualified, PPAP capable, IATF 16949 certified facilities
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. "Green" Device

Technical Specifications

CharacteristicSymbolValueUnitCondition
Nominal R1R1 (NOM)10kΩ
Nominal R2R2 (NOM)10kΩ
Supply VoltageVCC50V@ TA = +25C, unless otherwise specified.
Input VoltageVIN-5 to +40V@ TA = +25C, unless otherwise specified.
Output Current (Max)IC(MAX)100mA@ TA = +25C, unless otherwise specified.
Power DissipationPD270mW@ TA = +25C, unless otherwise specified. (Note 5 & 6)
Thermal Resistance, Junction to Ambient AirRθJA450°C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
Input Voltage (OFF)Vl(off)0.5VVCC = 5V, IO = 100A (Note 7)
Input Voltage (ON)Vl(on)3.0VVO = 0.3V, IO = 10mA (Note 8)
Output Voltage (ON)VO(on)0.3VIO/Il = 10mA / 0.5mA
Input CurrentIl0.88mAVI = 5V
Output Current (OFF)IO(off)0.5µAVCC = 50V, VI = 0V
DC Current GainGl30VO = 5V, IO = 5mA
Input Resistor (R1) ToleranceΔR130%
Resistance Ratio ToleranceΔ(R2/R1)20%
Gain-Bandwidth ProductfT250MHzVCE = 10V, IE = 5mA, f = 100MHz (Note 9)

2308101656_DIODES-ADC114EUQ-13_C5245694.pdf

Related Products
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications factory
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.