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quality Low Profile D FLAT Package Ultra Fast Rectifier Diodes US1MDFQ-13 with High Current Surge Capability factory
quality Low Profile D FLAT Package Ultra Fast Rectifier Diodes US1MDFQ-13 with High Current Surge Capability factory

Low Profile D FLAT Package Ultra Fast Rectifier Diodes US1MDFQ-13 with High Current Surge Capability

Key Attributes
Model Number: US1MDFQ-13
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
700V
Voltage - Forward(Vf@If):
1.7V@1.0A
Current - Rectified:
1A
Mfr. Part #:
US1MDFQ-13
Package:
D-FLAT
Product Description

US1JDFQ / US1MDFQ ULTRA-FAST RECTIFIER

The US1JDFQ and US1MDFQ are ultra-fast rectifiers designed for high efficiency applications. Packaged in a low-profile D-FLAT package, these devices offer features such as glass-passivated die construction, surge overload rating to 30A peak, and high current capability. They are ideal for reverse protection, switching, and blocking applications.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Not specified
  • Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
  • Color: Not specified
  • Certifications: AEC-Q101 Standards Qualified, RoHS Compliant, Halogen and Antimony Free ("Green" Device), PPAP Capable

Technical Specifications

Characteristic Symbol US1JDFQ US1MDFQ Unit
Peak Repetitive Reverse Voltage VRRM 600 1000 V
Working Peak Reverse Voltage VRWM 600 1000 V
DC Blocking Voltage VR 600 1000 V
RMS Reverse Voltage VR(RMS) 420 700 V
Average Rectified Output Current @TT = +25C IO 1.0 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave IFSM 30 30 A
Reverse Breakdown Voltage @IR = 5A V(BR)R 600 1000 V
Forward Voltage Drop @IF = 1.0A VF 1.7 1.7 V
Peak Reverse Current @TA = +25C at Rated DC Blocking Voltage IR 5.0 5.0 A
Peak Reverse Current @TA = +100C at Rated DC Blocking Voltage IR 100 100 A
Maximum Reverse Recovery Time tRR 75 75 ns
Total Capacitance @1.0MHz, 4.0V DC CT 10 10 pF
Thermal Resistance, Junction to Terminal RJT 44 44 C/W
Thermal Resistance, Junction to Ambient RJA 80 80 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 -55 to +150 C

1912271703_DIODES-US1MDFQ-13_C460961.pdf

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