Glass Passivated Rectifier Diodes 1N4935G-T Featuring Fast Switching and Low Forward Voltage Drop
Key Attributes
Model Number:
1N4935G-T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@200V
Reverse Recovery Time (trr):
200ns
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.2V@1A
Current - Rectified:
1A
Mfr. Part #:
1N4935G-T
Package:
DO-41
Product Description
Product Overview
The 1N4933G - 1N4937G series are 1.0A Fast Recovery Glass Passivated Rectifiers designed for high efficiency applications. They feature a diffused junction, fast switching speed, high current capability, and low forward voltage drop. These rectifiers are suitable for general purpose rectification and are RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Construction: Glass Passivated Die, Diffused Junction
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Terminals: Bright Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Polarity: Cathode Band
- Certifications: RoHS Compliant (Note 4)
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Characteristic | Symbol | 1N4933G | 1N4934G | 1N4935G | 1N4936G | 1N4937G | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | V |
| Working Peak Reverse Voltage | VRWM | 50 | 100 | 200 | 400 | 600 | V |
| DC Blocking Voltage | VR | 50 | 100 | 200 | 400 | 600 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | V |
| Average Rectified Output Current @ TA = 75C (Note 1) | IO | 1.0 | A | ||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | IFSM | 30 | A | ||||
| Forward Voltage @ IF = 1.0A | VFM | 1.2 | V | ||||
| Peak Reverse Current @ TA = 25C at Rated DC Blocking Voltage | IRM | 5.0 | µA | ||||
| Peak Reverse Current @ TA = 100C | IRM | 100 | µA | ||||
| Reverse Recovery Time (Note 3) | trr | 200 | ns | ||||
| Typical Junction Capacitance (Note 2) | Cj | 15 | pF | ||||
| Typical Thermal Resistance Junction to Ambient | RθJA | 100 | K/W | ||||
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C | ||||
2308101555_DIODES-1N4935G-T_C5245049.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
