Automotive Grade NPN Transistor Diodes DDTC113TE 7 F SOT523 Package Fully RoHS Compliant Green Device
Key Attributes
Model Number:
DDTC113TE-7-F
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
1kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DDTC113TE-7-F
Package:
SOT-523
Product Description
Product Overview
The DDTC (R1-ONLY SERIES) E is an NPN pre-biased transistor in an SOT523 package. It features epitaxial planar die construction, complementary PNP types available (DDTA), and a built-in biasing resistor (R1 only). This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device. It is suitable for automotive applications requiring specific change control, being AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT523
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish
- Certifications: AEC-Q101 qualified, PPAP capable, IATF 16949 certified facilities
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Part Number | R1 (NOM) | Collector-Base Breakdown Voltage (V) | Collector-Emitter Breakdown Voltage (V) | Emitter-Base Breakdown Voltage (V) | Collector Current (mA) | Collector Cutoff Current (A) | Emitter Cutoff Current (A) | Collector-Emitter Saturation Voltage (V) | DC Current Transfer Ratio (hFE) | Input Resistor (R1) Tolerance (%) | Gain-Bandwidth Product (MHz) | Status | Marking | Reel Size (inches) | Tape Width (mm) | Quantity Per Reel |
| DDTC113TE | 1k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N01 | 7 | 8 | 3,000 |
| DDTC123TE | 2.2k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N03 | 7 | 8 | 3,000 |
| DDTC143TE | 4.7k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N07 | 7 | 8 | 3,000 |
| DDTC114TE | 10k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N12 | 7 | 8 | 3,000 |
| DDTC124TE | 22k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N16 | 7 | 8 | 3,000 |
| DDTC124TEQ | 22k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N16 | 7 | 8 | 3,000 |
| DDTC144TE | 47k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N19 | 7 | 8 | 3,000 |
| DDTC115TE | 100k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Active | N23 | 7 | 8 | 3,000 |
| DDTC125TE | 200k | 50 | 50 | 5 | 100 | 0.5 | 0.5 | 0.3 | 100-600 | -30 to +30 | 250 | Obsolete | N25 | 7 | 8 | 3,000 |
2308101559_DIODES-DDTC113TE-7-F_C5245832.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
