1 amp Schottky diode DIODES SDM1A40CSP-7 designed for blocking boost switching and reverse protection
Key Attributes
Model Number:
SDM1A40CSP-7
Product Custom Attributes
Reverse Leakage Current (Ir):
75uA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
510mV@1A
Current - Rectified:
1A
Mfr. Part #:
SDM1A40CSP-7
Package:
X3-WLB1006-2
Product Description
SDM1A40CSP Schottky Barrier Rectifier
The SDM1A40CSP is a 40-volt, 1A Schottky barrier rectifier optimized for low forward voltage drop and low leakage current. Housed in a compact chip scale package (CSP) occupying only 0.6mm2 of board space, its low thermal resistance enables designers to increase efficiency while reducing board footprint. It is ideally suited for portable applications as a blocking diode, boost diode, switching diode, or reverse protection diode.
Features and Benefits
- Off-Board Profile of 0.275mm More than 30% Thinner than DFN1006
- Low Forward Voltage (VF) Minimizes Conduction Losses and Improves Efficiency
- Reduced High Temperature Reverse Leakage; Increased Reliability Against Thermal Runaway Failure in High Temperature Operation
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. Green Device
Product Attributes
- Brand: Diodes Incorporated
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V | |
| Average Rectified Output Current | IO | 1 | A | |
| Repetitive Peak Forward Current (Pulse Wave = 1 msec, Duty Cycle = 25%) | IFRM | 5 | A | |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | IFSM | 14 | A | |
| Forward Voltage Drop | VF | 0.41 - 0.46 | V | IF = 0.5A, TJ = +25C |
| Forward Voltage Drop | VF | 0.51 - 0.56 | V | IF = 1.0A, TJ = +25C |
| Forward Voltage Drop | VF | 0.49 | V | IF = 1.0A, TJ = +125C |
| Leakage Current | IR | - 15 | A | VR = 10V, TJ = +25C |
| Leakage Current | IR | - 75 | A | VR = 40V, TJ = +25C |
| Leakage Current | IR | 9.5 | mA | VR = 40V, TJ = +125C |
| Junction Capacitance | CT | 35 | pF | VR = 4V, f = 1.0MHz |
| Typical Thermal Resistance Junction to Ambient | RJA | 135 | C/W | Device mounted on FR-4 PCB, 2oz. Copper, minimum recommended pad layout |
| Typical Thermal Resistance Junction to Ambient | RJA | 80 | C/W | Device mounted on FR-4 PCB, 2oz. 1 square inch Copper |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
2412251119_DIODES-SDM1A40CSP-7_C526765.pdf
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