PNP pre biased small signal surface mount transistor DIODES DDTA114YUA-7-F with built in biasing resistors
Key Attributes
Model Number:
DDTA114YUA-7-F
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DDTA114YUA-7-F
Package:
SOT-323-3
Product Description
PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
The DDTA (R1R2 SERIES) UA is a PNP pre-biased small signal surface mount transistor featuring epitaxial planar die construction and built-in biasing resistors (R1R2). It offers complementary NPN types available (DDTC) and is lead-free/RoHS compliant and a "Green" device. The transistor is housed in a SOT-323 package made from molded plastic with "Green" molding compound, meeting UL Flammability Classification Rating 94V-0. It is suitable for various electronic applications requiring pre-biased transistor functionality.
Product Attributes
- Brand: Diodes Incorporated
- Origin: Not specified
- Material: Molded Plastic, "Green" Molding Compound
- Color: Not specified
- Certifications: RoHS Compliant, "Green" Device
- Moisture Sensitivity: Level 1 per J-STD-020C
Technical Specifications
| P/N | R1 (NOM) | R2 (NOM) | Type Code | VCC (Max) | VIN (Max) | IO (Max) | Pd (Max) | RJA | Tj, TSTG |
|---|---|---|---|---|---|---|---|---|---|
| DDTA113ZUA | 1K | 10K | P02 | -50V | +5V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA123YUA | 2.2K | 10K | P05 | -50V | +5V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA123JUA | 2.2K | 47K | P06 | -50V | +5V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA143XUA | 4.7K | 10K | P09 | -50V | +7V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA143FUA | 4.7K | 22K | P10 | -50V | +6V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA143ZUA | 4.7K | 47K | P11 | -50V | +5V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA114YUA | 10K | 4.7K | P14 | -50V | +6V | -70mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA114WUA | 10K | 47K | P15 | -50V | +10V | -100mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA124XUA | 22K | 47K | P18 | -50V | +10V | -50mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA144VUA | 47K | 4.7K | P21 | -50V | +15V | -30mA | 200mW | 625 C/W | -55 to +150 C |
| DDTA144WUA | 47K | 10K | P22 | -50V | +10V | -30mA | 200mW | 625 C/W | -55 to +150 C |
2304140030_DIODES-DDTA114YUA-7-F_C526525.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
