Low on resistance N channel enhancement mode transistor DIODES 2N7002 7 F ideal for power management
Product Overview
The 2N7002 is an N-channel enhancement mode Field Effect Transistor designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, including motor controls and general power-management functions. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, all within a small surface-mount package. The device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, qualifying it as a "Green" device. It is also qualified to JEDEC standards for high reliability. An automotive-compliant version (2N7002Q) is available under a separate datasheet.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23 (Standard)
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. "Green" Device (Note 3)
- Reliability: Qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | 60 | V | TA = +25C |
| On-Resistance (Max) | RDS(ON) | 5 | VGS = 10V, TA = +25C | |
| On-Resistance (Max) | RDS(ON) | 7.5 | VGS = 5V, TA = +25C | |
| Drain Current (Max) | ID Max | 210 | mA | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 60 | V | |
| Drain-Gate Voltage | VDGR | 60 | V | RGS 1.0M |
| Gate-Source Voltage (Continuous) | VGSS | 20 | V | |
| Gate-Source Voltage (Pulsed) | VGSS | 40 | V | (Note 8) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 170 | mA | TA = +25C (Note 5) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 120 | mA | TA = +85C (Note 5) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 105 | mA | TA = +100C (Note 5) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 210 | mA | TA = +25C (Note 6) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 150 | mA | TA = +85C (Note 6) |
| Continuous Drain Current (VGS = 10V, Steady State) | ID | 135 | mA | TA = +100C (Note 6) |
| Maximum Continuous Body Diode Forward Current | IS | 0.2 | A | (Note 6) |
| Maximum Continuous Body Diode Forward Current (Pulsed) | IS | 0.5 | A | (Note 8) |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 800 | mA | |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 370 | mW | (Note 5) |
| Total Power Dissipation | PD | 540 | mW | (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 348 | C/W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 241 | C/W | (Note 6) |
| Thermal Resistance, Junction to Case | RJC | 91 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 10A (Note 7) |
| Zero Gate Voltage Drain Current @ TJ = +25C | IDSS | 1.0 | A | VDS = 60V, VGS = 0V (Note 7) |
| Zero Gate Voltage Drain Current @ TJ = +125C | IDSS | 500 | A | VDS = 60V, VGS = 0V (Note 7) |
| Gate-Body Leakage | IGSS | 10 | nA | VGS = 20V, VDS = 0V (Note 7) |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 2.5 | V | VDS = VGS, ID = 250A (Note 7) |
| Static Drain-Source On-Resistance @ TJ = +25C | RDS(ON) | 3.2 | VGS = 5.0V, ID = 0.05A (Note 7) | |
| Static Drain-Source On-Resistance @ TJ = +25C | RDS(ON) | 5.0 | VGS = 10V, ID = 0.5A (Note 7) | |
| Static Drain-Source On-Resistance @ TJ = +125C | RDS(ON) | 7.5 | VGS = 10V, ID = 0.5A (Note 7) | |
| On-State Drain Current | ID(ON) | 0.5 to 1.0 | A | VGS = 10V, VDS = 7.5V (Note 7) |
| Forward Transconductance | gFS | 80 | mS | VDS = 10V, ID = 0.2A (Note 7) |
| Diode Forward Voltage | VSD | 0.78 to 1.5 | V | VGS = 0V, IS = 115mA (Note 7) |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 22 to 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz (Note 8) |
| Output Capacitance | Coss | 11 to 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz (Note 8) |
| Reverse Transfer Capacitance | Crss | 2.0 to 5.0 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz (Note 8) |
| Gate Resistance | Rg | 120 | VDS = 0V, VGS = 0V, f = 1.0MHz (Note 8) | |
| Total Gate Charge (VGS = 4.5V) | Qg | 223 | pC | VDS = 10V, ID = 250mA (Note 8) |
| Gate-Source Charge | Qgs | 82 | pC | (Note 8) |
| Gate-Drain Charge | Qg d | 178 | pC | (Note 8) |
| Turn-On Delay Time | tD(ON) | 2.8 | ns | VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 (Note 8) |
| Turn-On Rise Time | tR | 3.0 | ns | (Note 8) |
| Turn-Off Delay Time | tD(OFF) | 7.6 | ns | (Note 8) |
| Turn-Off Fall Time | tF | 5.6 | ns | (Note 8) |
| Mechanical Data | ||||
| Package | SOT23 | |||
| Weight | 0.009 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | 2N7002-7-F | SOT23, 3,000 Tape & Reel | (Note 4) | |
| Part Number | 2N7002-13-F | SOT23, 10,000 Tape & Reel | (Note 4) | |
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
2512091437_DIODES-2N7002-7-F_C85049.pdf
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