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quality power management solution DIODES DMG2307L 7 P Channel MOSFET with superior switching characteristics factory
quality power management solution DIODES DMG2307L 7 P Channel MOSFET with superior switching characteristics factory

power management solution DIODES DMG2307L 7 P Channel MOSFET with superior switching characteristics

Key Attributes
Model Number: DMG2307L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
134mΩ@4.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45.9pF
Number:
-
Output Capacitance(Coss):
51.3pF
Input Capacitance(Ciss):
371.3pF
Pd - Power Dissipation:
1.36W
Gate Charge(Qg):
8.2nC@10V
Mfr. Part #:
DMG2307L-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated DMG2307L is a P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for general-purpose interfacing, power management functions, and load switching in portable devices.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: DMG
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Fully RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. "Green" Device (Note 3)
  • Automotive Compliant Part Available: Yes (DMG2307LQ under separate datasheet)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A
Product Summary
Breakdown Voltage (BVDSS) -30V
On-Resistance (RDS(ON)) Max @ VGS = -10V 90m TA = +25C
On-Resistance (RDS(ON)) Max @ VGS = -4.5V 134m TA = +25C
Continuous Drain Current (ID) Max @ VGS = -10V -3.8A TA = +25C
Continuous Drain Current (ID) Max @ VGS = -4.5V -3.1A TA = +25C
Maximum Ratings
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Note 5) @ VGS = -10V, TA = +25C ID -2.5 A Steady State
Continuous Drain Current (Note 6) @ VGS = -10V, TA = +25C ID -3.8 A Steady State
Continuous Drain Current (Note 6) @ VGS = -10V, TA = +25C ID -4.6 A t 10sec
Continuous Drain Current (Note 6) @ VGS = -4.5V, TA = +25C ID -3.1 A Steady State
Pulsed Drain Current (Note 6) IDM -20 A
Thermal Characteristics
Total Power Dissipation (Note 5) PD 0.76 W
Thermal Resistance, Junction to Ambient (Note 5) RJA 159 C/W
Total Power Dissipation (Note 6) PD 1.36 W
Thermal Resistance, Junction to Ambient (Note 6) RJA 94 C/W
Total Power Dissipation (Note 6) t 10sec PD 1.9 W
Thermal Resistance, Junction to Ambient (Note 6) t 10sec RJA 65.8 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
OFF CHARACTERISTICS (Note 7)
Zero Gate Voltage Drain Current @TC = +25C IDSS -1.0 A VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) -1.0 to -3.0 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance @ VGS = -10V, ID = -2.5A RDS(ON) 70 to 90 m
Static Drain-Source On-Resistance @ VGS = -4.5V, ID = -2.5A RDS(ON) 105 to 134 m
Forward Transfer Admittance |Yfs| 4.8 S VDS = -10V, ID = -2.5A
Diode Forward Voltage (Note 6) VSD -0.75 to -1.0 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 371.3 pF VDS = -15V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 51.3 pF VDS = -15V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 45.9 pF VDS = -15V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 17 VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V) Qg 4.0 nC VGS = -10V, VDS = -15V, ID = -3A
Total Gate Charge (VGS = -10V) Qg 8.2 nC VGS = -10V, VDS = -15V, ID = -3A
Gate-Source Charge Qgs 0.9 nC VGS = -10V, VDS = -15V, ID = -3A
Gate-Drain Charge Qgd 1.2 nC VGS = -10V, VDS = -15V, ID = -3A
Turn-On Delay Time tD(ON) 4.8 ns VDS = -15V, VGS = -10V, RL = 15, RG = 6, ID = -1A
Turn-On Rise Time tR 7.3 ns VDS = -15V, VGS = -10V, RL = 15, RG = 6, ID = -1A
Turn-Off Delay Time tD(OFF) 22.4 ns VDS = -15V, VGS = -10V, RL = 15, RG = 6, ID = -1A
Turn-Off Fall Time tF 13.4 ns VDS = -15V, VGS = -10V, RL = 15, RG = 6, ID = -1A
Mechanical Data
Package SOT23
Package Material Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0
Moisture Sensitivity Level 1 per J-STD-020
Terminal Connections Indicator See Diagram
Terminals Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208
Weight 0.08 grams (Approximate)
Ordering Information
Part Number DMG2307L-7
Package SOT23
Packing 3,000 Tape & Reel

2412250959_DIODES-DMG2307L-7_C102620.pdf

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