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quality 3A bridge rectifier DIODES DBF310-13 suitable for adapters battery chargers and LED lighting systems factory
quality 3A bridge rectifier DIODES DBF310-13 suitable for adapters battery chargers and LED lighting systems factory

3A bridge rectifier DIODES DBF310-13 suitable for adapters battery chargers and LED lighting systems

Key Attributes
Model Number: DBF310-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
110A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
930mV@3A
Current - Rectified:
3A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DBF310-13
Package:
DBF
Product Description

Product Overview

The DBF310 is a 3A surface mount bridge rectifier designed for AC to DC full wave rectification. It is suitable for various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package for space saving, low leakage current, low forward voltage drop, and a surge overload rating of 110A peak. This device is lead-free, RoHS compliant, and halogen/antimony free, making it a 'Green' device.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Bridge Rectifier
  • Package: DBF (Molded Plastic, UL Flammability Classification Rating 94V-0)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Lead Free Plating (Matte Tin Finish)
  • Polarity: As Marked on Body
  • Compliance: RoHS Compliant, Halogen and Antimony Free ('Green' Device)
  • Origin: Not specified in text

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Maximum RatingsVRRM, VRWM, VR1,000V
VR(RMS)700V
IO (@ TC = +120C)3.0ASingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
IFSM (8.3ms)110ANon-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load
I2t (1ms < t < 8.3ms)50.2A2SI2t Rating for Fusing
Thermal CharacteristicsRJA (Per Element)15C/WTypical Thermal Resistance, Junction to Ambient (Note 6)
RJC (Per Element)5C/WTypical Thermal Resistance, Junction to Case (Per Element)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Electrical CharacteristicsV(BR)R (Per Element)1,000VIR = 5A, Reverse Breakdown Voltage
VF (Per Element)0.88 - 1.0VIF = 1.5A, TA = +25C; IF = 3A, TA = +25C
IR (Per Element)0.07 - 500AVR = 1,000V, TA = +25C; VR = 1,000V, TA = +125C, Leakage Current
CT (Per Element)35pFVR = 4V, f = 1.0MHz, Total Capacitance

2412251101_DIODES-DBF310-13_C460835.pdf

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