Power MOSFET DIODES ZXMP4A16GTA featuring low on resistance and halogen free green molding compound for automotive
Key Attributes
Model Number:
ZXMP4A16GTA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V,2.9A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
1.007nF
Pd - Power Dissipation:
3.9W
Gate Charge(Qg):
26.1nC@10V
Mfr. Part #:
ZXMP4A16GTA
Package:
SOT-223
Product Description
Product Overview
The ZXMP4A16G is an advanced 40V P-channel enhancement mode MOSFET designed for high-efficiency power management applications. It excels in minimizing on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for DC-DC converters and power management functions, this device offers low input capacitance, fast switching speeds, and is manufactured with a lead-free, halogen- and antimony-free "Green" molding compound. It is suitable for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223 (Type DN)
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish
- Finish: Lead-Free, RoHS Compliant
- Material Compliance: Halogen and Antimony Free. "Green" Device
- Origin: Not specified in document
- Color: Not specified in document
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | -40 | V | TA = +25C |
| On-Resistance (Max) | RDS(on) | 60 | m | VGS = -10V, ID = -3.8A |
| On-Resistance (Max) | RDS(on) | 100 | m | VGS = -4.5V, ID = -2.9A |
| Continuous Drain Current (Max) | ID | -6.4 | A | TA = +25C, VGS = -10V |
| Continuous Drain Current (Max) | ID | -5.0 | A | TA = +25C, VGS = -4.5V |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -40 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C |
| Continuous Drain Current, VGS = -10V (Steady State, TA = +25C) | ID | -6.4 | A | (Note 5) |
| Continuous Drain Current, VGS = -10V (Steady State, TA = +70C) | ID | -5.1 | A | (Note 5) |
| Continuous Drain Current, VGS = -10V (Steady State, TA = +25C) | ID | -4.6 | A | (Note 6) |
| Maximum Body Diode Forward Current | IS | -6.4 | A | (Note 5) |
| Pulsed Drain Current | IDM | -21 | A | (Note 7) |
| Pulsed Source Current | ISM | -21 | A | (Note 7) |
| Thermal Characteristics | ||||
| Total Power Dissipation (TA = +25C) | PD | 2.0 | W | (Note 6) |
| Linear Derating Factor | 16 | mW/C | (Note 6) | |
| Total Power Dissipation (TA = +25C) | PD | 3.9 | W | (Note 5) |
| Linear Derating Factor | 31 | mW/C | (Note 5) | |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 62.5 | C/W | (Note 6) |
| Thermal Resistance, Junction to Ambient (Steady State) | RJA | 32 | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0V, ID = -250A (Note 8) |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | A | VDS = -40V, VGS = 0V (Note 8) |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V (Note 8) |
| Gate Threshold Voltage | VGS(th) | -1.0 | V | VDS = VGS, ID = -250A (Note 8) |
| Static Drain-Source On-Resistance | RDS(on) | 60 | m | VGS = -10V, ID = -3.8A (Note 9) |
| Static Drain-Source On-Resistance | RDS(on) | 100 | m | VGS = -4.5V, ID = -2.9A (Note 9) |
| Diode Forward Voltage | VSD | -0.85 to -1.2 | V | VGS = 0V, IS = -3.4A (Note 9) |
| Forward Transconductance | gfs | 8.85 | S | VDS = -15V, ID = -3.8A (Notes 9 & 10) |
| Input Capacitance | Ciss | 1,007 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz (Note 10) |
| Output Capacitance | Coss | 130 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz (Note 10) |
| Reverse Transfer Capacitance | Crss | 85 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz (Note 10) |
| Total Gate Charge (VGS = -5.0V) | Qg | 13.6 | nC | VDS = -20V, ID = -3.8A (Note 10) |
| Total Gate Charge (VGS = -10V) | Qg | 26.1 | nC | VDS = -20V, ID = -3.8A (Note 10) |
| Gate-Source Charge | Qgs | 2.8 | nC | VDS = -20V, ID = -3.8A (Note 10) |
| Gate-Drain Charge | Qgd | 4.8 | nC | VDS = -20V, ID = -3.8A (Note 10) |
| Turn-On Delay Time | tD(on) | 2.33 | ns | VGS = -10V, VDD = -20V, RG = 6.0, ID = -1.0A (Note 10) |
| Turn-On Rise Time | tr | 8.84 | ns | VGS = -10V, VDD = -20V, RG = 6.0, ID = -1.0A (Note 10) |
| Turn-Off Delay Time | tD(off) | 29.18 | ns | VGS = -10V, VDD = -20V, RG = 6.0, ID = -1.0A (Note 10) |
| Turn-Off Fall Time | tf | 12.54 | ns | VGS = -10V, VDD = -20V, RG = 6.0, ID = -1.0A (Note 10) |
| Body Diode Reverse Recovery Time | trr | 27.2 | ns | IF = -3A, dI/dt = 100A/s (Note 10) |
| Body Diode Reverse Recovery Charge | Qrr | 25.4 | nC | IF = -3A, dI/dt = 100A/s (Note 10) |
| Mechanical Data | ||||
| Weight (Approximate) | 0.112 | grams | ||
| Ordering Information | ||||
| Part Number | Package | Packing | Qty. | Carrier |
| ZXMP4A16GTA | SOT223 (Type DN) | Tape & Reel | 1000 | |
| ZXMP4A16GTC | SOT223 (Type DN) | Tape & Reel | 4000 | |
2412251002_DIODES-ZXMP4A16GTA_C141324.pdf
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