1.5A Glass Passivated Bridge Rectifier Diodes KBP10G Featuring 1000V Peak Reverse Voltage Capability
Key Attributes
Model Number:
KBP10G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@1.5A
Current - Rectified:
1.5A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
KBP10G
Package:
KBP
Product Description
KBP005G - KBP10G 1.5A Glass Passivated Bridge Rectifier
The KBP005G to KBP10G series are 1.5A glass passivated bridge rectifiers designed for printed circuit board applications. These rectifiers feature high case dielectric strength, low reverse leakage current, and a surge overload rating to 40A peak. They are ideal for general purpose rectification and are UL listed.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Terminals: Matte Tin Finish, Solderable per MIL-STD-202, Method 208
- Certifications: UL Listed Under Recognized Component Index, File Number E94661; RoHS Compliant
- Origin: Not specified in text
- Color: Not specified in text
Technical Specifications
| Characteristic | Symbol | KBP005G | KBP01G | KBP02G | KBP04G | KBP06G | KBP08G | KBP10G | Unit |
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Rectified Output Current @ TC = 105C | IO | 1.5 | A | ||||||
| Non-Repetitive Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave | IFSM | 40 | A | ||||||
| Forward Voltage per element @ IF = 1.5A | VFM | 1.1 | V | ||||||
| Peak Reverse Current @TC = 25C at Rated DC Blocking Voltage | IRM | 5.0 | A | ||||||
| Peak Reverse Current @TC = 125C at Rated DC Blocking Voltage | IRM | 500 | A | ||||||
| Typical Total Capacitance (Note 1) | CT | 20 | pF | ||||||
| Typical Thermal Resistance, Junction to Case | RJC | 18 | C/W | ||||||
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | ||||||
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
3. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
2304140030_DIODES-KBP10G_C151415.pdf
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