Durable Diodes GBJ2504-F 25A Bridge Rectifier with High Dielectric Strength and Low Leakage Current
Key Attributes
Model Number:
GBJ2504-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - Forward(Vf@If):
1.05V@12.5A
Current - Rectified:
25A
Voltage - DC Reverse(Vr):
400V
Mfr. Part #:
GBJ2504-F
Package:
GBJ
Product Description
Product Overview
The GBJ25005 - GBJ2510 series are 25A glass-passivated bridge rectifiers designed for printed circuit board applications. They feature high case dielectric strength, low reverse leakage current, and surge overload ratings up to 350A peak. These rectifiers are ideal for various electronic applications requiring efficient rectification.
Product Attributes
- Brand: Diodes Incorporated
- Certifications: UL Listed Under Recognized Component Index, File Number E94661
- Compliance: Lead Free Finish; RoHS Compliant
- Material: Molded Plastic (UL Flammability Classification 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 (Tin Finish)
- Polarity: Molded on Body
- Mounting: Through Hole for #6 Screw
Technical Specifications
| Characteristic | Symbol | GBJ25005 | GBJ2501 | GBJ2502 | GBJ2504 | GBJ2506 | GBJ2508 | GBJ2510 | Unit |
|---|---|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Working Peak Reverse Voltage | VRWM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| DC Blocking Voltage | VR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Forward Rectified Output Current (@ TC = 100C) | IO | 25 | A | ||||||
| Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 350 | A | ||||||
| Typical Thermal Resistance Junction to Case | RJC | 1.0 | C/W | ||||||
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | ||||||
| Forward Voltage (@ IF = 12.5A) | VFM | 1.05 | V | ||||||
| Peak Reverse Current (@ TC = 25C, at Rated DC Blocking Voltage) | IR | 10 | A | ||||||
| Peak Reverse Current (@ TC = 125C, at Rated DC Blocking Voltage) | IR | 500 | A | ||||||
| I2t Rating for Fusing (t > 1ms and < 8.3 ms) | I2t | 510 | A2s | ||||||
| Typical Total Capacitance (per element @ 1.0 MHz, 4.0V DC) | CT | 85 | pF | ||||||
2412251003_DIODES-GBJ2504-F_C150738.pdf
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