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quality 2.5A glass passivated bridge rectifier DIODES MSB25MH-13 compliant with RoHS and environmental standards factory
quality 2.5A glass passivated bridge rectifier DIODES MSB25MH-13 compliant with RoHS and environmental standards factory

2.5A glass passivated bridge rectifier DIODES MSB25MH-13 compliant with RoHS and environmental standards

Key Attributes
Model Number: MSB25MH-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
160A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@2.5A
Current - Rectified:
2.5A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MSB25MH-13
Package:
MSBL
Product Description

Product Overview

The MSB25MH is an advanced, new product featuring a 2.5A surface mount glass-passivated bridge rectifier. It is designed for AC to DC full wave rectification in a variety of applications including Switch Mode Power Supplies (SMPS), LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key benefits include a compact, thin profile, reliable construction, suitability for SMT manufacturing, and compliance with environmental standards.

Product Attributes

  • Brand: Diodes Incorporated
  • Construction: Glass Passivated Die
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Material: Molded Plastic Case (UL Flammability Classification Rating 94V-0)
  • Terminals: Lead Free Plating (Matte Tin Finish)

Technical Specifications

CharacteristicSymbolValueUnitCondition
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		VRRM
VRWM
VR		1000V
RMS Reverse VoltageVR(RMS)700V
Average Rectified Output CurrentIO2.5A@ TC = +110C
Non-Repetitive Peak Forward Surge Current (8.3ms)IFSM80ASingle Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Peak Forward Surge Current (1.0ms)IFSM160ASingle Half Sine-Wave Superimposed on Rated Load
I2 t Rating for Fusing (1ms < t < 8.3ms)I2t26.5AS
Reverse Breakdown VoltageV(BR)R1000VIR = 5A
Forward Voltage (Per Element)VF1.1VIF = 2.5A, TA = +25C
Forward Voltage (Per Element)VF1.02VIF = 2.5A, TA = +125C
Leakage Current (Per Element)IR5AVR = 1000V, TA = +25C
Leakage Current (Per Element)IR500AVR = 1000V, TA = +125C
Total CapacitanceCT30pFVR = 4V, f = 1.0MHz
Thermal Resistance, Junction to Ambient (Per Element)RJA35C/WDevice mounted on glass-epoxy substrate with 1 oz 20mm x 20mm Cu pad per pin.
Thermal Resistance, Junction to CaseRJC7.8C/W
Thermal Resistance, Junction to LeadRJL16C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

2308101653_DIODES-MSB25MH-13_C5245223.pdf

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