Green Device 3 Amp Schottky Barrier Rectifier DIODES B360B-13-F Designed for Automated Assembly and Loss

Key Attributes
Model Number: B360B-13-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
500uA@60V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
700mV@3A
Current - Rectified:
3A
Mfr. Part #:
B360B-13-F
Package:
SMB(DO-214AA)
Product Description

Diodes Incorporated B320B - B360B 3.0A Surface Mount Schottky Barrier Rectifier

The Diodes Incorporated B320B - B360B series are 3.0A surface mount Schottky barrier rectifiers featuring guard ring die construction for transient protection. They are ideally suited for automated assembly, offering low power loss and high efficiency. These rectifiers are designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. They are totally lead-free, fully RoHS compliant, and halogen and antimony free ("Green" device), qualified to AEC-Q101 standards for high reliability and are PPAP capable.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Not specified in text
  • Material: Molded Plastic ("Green" Molding Compound), Lead Free Plating (Matte Tin Finish)
  • Color: Not specified in text
  • Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant, "Green" Device

Technical Specifications

Characteristic Symbol B320B B330B B340B/B340BQ B350B B360B Unit Test Condition
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM / VRWM / VR 20 30 40 50 60 V Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Average Rectified Output Current IO 3.0 A @ TA = +100C
Non-Repetitive Peak Forward Surge Current IFSM 100 A 8.3ms single half sine-wave superimposed on rated load
Forward Voltage Drop VF 0.50 0.70 V IF = 3.0A, TA = +25C
Leakage Current IR 0.1 0.3 0.4 0.2 0.5 mA @ Rated VR, TA = +25C
Leakage Current IR 1.0 10 0.6 0.7 mA @ Rated VR, TA = +100C
Total Capacitance CT 200 pF VR = 4V, f = 1MHz
Typical Thermal Resistance, Junction to Terminal RJT 25 C/W (Note 6)
Typical Thermal Resistance, Junction to Ambient RJA 95 C/W (Note 6)
Operating Temperature Range TJ -55 to +150 C
Storage Temperature Range TSTG -55 to +150 C

2304140030_DIODES-B360B-13-F_C91546.pdf

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