Lead free RoHS compliant DIODES GBP808N HF 8A 800V bridge rectifier ideal for printed circuit boards
Key Attributes
Model Number:
GBP808N_HF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
330A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.05V@4A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
GBP808N_HF
Package:
GBP
Product Description
Product Overview
The GBP808N is an 8A standard recovery bridge rectifier featuring glass-passivated die construction and a rating to 800V PRV. It is ideal for printed circuit board applications and offers reliable construction utilizing molded plastic. This device is lead-free, RoHS compliant, and Halogen and Antimony free, making it a "Green" device. It is suitable for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities.
Product Attributes
- Brand: Diodes Incorporated
- Case Material: Plastic material, UL flammability classification 94V-0
- Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Polarity Indicator: Symbol molded on body
- Certifications: UL recognized file # E94661
- Compliance: Lead-Free Finish; RoHS Compliant; Halogen and Antimony Free. Green Device
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 800 | V | |
| Maximum DC blocking voltage | VDC | 800 | V | |
| Maximum average rectified output current | IF(AV) | 8.0 | A | @TC = +100C with heatsink |
| 1.5 | A | @TC = +100C without heatsink | ||
| Peak forward surge current | IFSM | 165 | A | 8.3ms single half sine wave superimposed on rated load. TJ = +25C |
| 330 | A | 1.0ms single half sine wave superimposed on rated load. TJ = +25C | ||
| I2t rating for fusing (t = 8.3ms) | I2t | 112 | A2S | |
| Operating temperature range | TJ | -55 to + 150 | C | |
| Storage temperature range | TSTG | -55 to + 150 | C | |
| Forward voltage | VF | 1.05 | V | IF = 4.0A TJ = +25C |
| Leakage current | IR | 1 | A | VR = 800V TJ = +25C |
| 100 | A | VR = 800V TJ = +125C | ||
| Typical junction capacitance | CJ | 45 | PF | Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. |
| Typical thermal resistance (without heatsink) | RthJC, RthJL, RthJA | 9.5 | C/W | |
| 24 | C/W | |||
| 28 | C/W | |||
| Typical thermal resistance (Note 6) | RthJC, RthJL, RthJA | 3.2 | C/W | Device mounted on 150mm x 150mm x 2mm Cu plate heatsink. |
| 4.8 | C/W | Device mounted on 150mm x 150mm x 2mm Cu plate heatsink. | ||
| 8 | C/W | Device mounted on 150mm x 150mm x 2mm Cu plate heatsink. |
2303300930_DIODES-GBP808N-HF_C5374697.pdf
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