glass passivated bridge rectifier DIODES S-GBJ2008F-TU-LT with 1000V voltage rating and high current capability
Key Attributes
Model Number:
S-GBJ2008F-TU-LT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
240A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.05V@10A
Current - Rectified:
20A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
S-GBJ2008F-TU-LT
Package:
GBJ
Product Description
GBJ2004 thru GBJ2010 Glass Passivated Bridge Rectifiers
The GBJ2004 thru GBJ2010 series are glass passivated bridge rectifiers designed for printed circuit board applications. They offer a high voltage rating up to 1000V PRV, low forward voltage drop, and high current capability. The construction utilizes a molded plastic technique with UL flammability classification 94V-0, resulting in a reliable and inexpensive product. Ideal for applications requiring efficient rectification and high voltage handling.
Product Attributes
- Brand: LITE-ON SEMICONDUCTOR
- Origin: Not specified
- Material: Molded plastic with UL flammability classification 94V-0
- Color: Not specified (Symbols molded on body)
- Certifications: UL Recognition File # E95060
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) @TC =100 C (A) | IFSM (A) | VF (V) | TJ (C) | TSTG (C) | R0JC (C/W) | IR (uA) | CJ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GBJ2004 | 400 | 280 | 400 | 20 (with heatsink) | 240 | 1.05 | -55 to +150 | -55 to +150 | 0.8 | 10 (@TJ =125 C) / 500 (@TJ =25 C) | 80 (Typ.) |
| GBJ2006 | 600 | 420 | 600 | 20 (with heatsink) | 240 | 1.05 | -55 to +150 | -55 to +150 | 0.8 | 10 (@TJ =125 C) / 500 (@TJ =25 C) | 80 (Typ.) |
| GBJ2008 | 800 | 560 | 800 | 20 (with heatsink) | 240 | 1.05 | -55 to +150 | -55 to +150 | 0.8 | 10 (@TJ =125 C) / 500 (@TJ =25 C) | 80 (Typ.) |
| GBJ2010 | 1000 | 700 | 1000 | 20 (with heatsink) | 240 | 1.05 | -55 to +150 | -55 to +150 | 0.8 | 10 (@TJ =125 C) / 500 (@TJ =25 C) | 80 (Typ.) |
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
1912111437_DIODES-S-GBJ2008F-TU-LT_C266407.pdf
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