High case dielectric strength DIODES GBJ2506-F glass passivated bridge rectifier rated at 25 amperes
Key Attributes
Model Number:
GBJ2506-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
350A
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.05V@12.5A
Current - Rectified:
25A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
GBJ2506-F
Package:
GBJ
Product Description
Product Overview
The GBJ25005 - GBJ2510 series are 25A glass passivated bridge rectifiers designed for printed circuit board applications. They feature high case dielectric strength, low reverse leakage current, and a surge overload rating up to 350A peak. These rectifiers are UL listed and RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Case Material: Molded Plastic (UL Flammability Classification 94V-0)
- Lead Finish: Tin (Lead Free Plating)
- Certifications: UL Listed Under Recognized Component Index, File Number E94661
- Moisture Sensitivity: Level 1 per J-STD-020
- RoHS Compliant: Yes (EU Directive 2002/95/EC, 2011/65/EU, 2015/863/EU)
Technical Specifications
| Characteristic | Symbol | GBJ25005 | GBJ2501 | GBJ2502 | GBJ2504 | GBJ2506 | GBJ2508 | GBJ2510 | Unit |
|---|---|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 50 - 1000 | V | ||||||
| Working Peak Reverse Voltage | VRWM | 50 - 1000 | V | ||||||
| DC Blocking Voltage | VR | 50 - 1000 | V | ||||||
| RMS Reverse Voltage | VR(RMS) | 35 - 700 | V | ||||||
| Average Forward Rectified Output Current @ TC = 100C | IO | 25 | A | ||||||
| Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 350 | A | ||||||
| Typical Thermal Resistance Junction to Case | RJC | 1.0 | C/W | ||||||
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | ||||||
| Forward Voltage (per element) @ IF = 12.5A | VFM | 1.05 | V | ||||||
| Peak Reverse Current @ TC = 25C at Rated DC Blocking Voltage | IR | 10 | A | ||||||
| Peak Reverse Current @ TC = 125C at Rated DC Blocking Voltage | IR | 500 | A | ||||||
| I2t Rating for Fusing (t > 1ms and < 8.3 ms) | I2t | 510 | As | ||||||
| Typical Total Capacitance (per element) @ 1.0 MHz, 4.0V DC | CT | 85 | pF | ||||||
2412251007_DIODES-GBJ2506-F_C155333.pdf
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