Diodes 1n4448w7f fast switching surface mount diode with ul 94v0 flammability and jeadec high reliability
Key Attributes
Model Number:
1N4448W-7-F
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
500mA
Mfr. Part #:
1N4448W-7-F
Package:
SOD-123
Product Description
Product Overview
The 1N4448W is a fast-switching surface-mount diode ideally suited for automated insertion in general-purpose switching applications. It offers high conductance and is available in a surface-mount SOD123 package.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOD123
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating)
- Polarity: Cathode Band
- Certifications/Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to JEDEC standards for High Reliability.
- Automotive Qualification: For automotive applications requiring specific change control (AEC-Q100/101/104/200, PPAP capable, IATF 16949 certified facilities), please contact Diodes.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |
| Peak Repetitive Reverse Voltage | VRRM | 75 | V | |
| Working Peak Reverse Voltage | VRWM | 75 | V | |
| DC Blocking Voltage | VR | 75 | V | |
| RMS Reverse Voltage | VR(RMS) | 53 | V | |
| Forward Continuous Current | IFM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 4.0 (1.0s), 1.0 (1.0ms) | A | |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 400 | mW | Note 5 |
| Thermal Resistance Junction to Ambient Air | RJA | 315 | C/W | Note 5 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage | V(BR)R | 75 | V | Min, IR = 10A |
| Forward Voltage | VFM | 0.62 | V | Max, IF = 5.0mA |
| 0.72 | Max, IF = 10mA | |||
| 0.855 | Max, IF = 100mA | |||
| 1.0 | Max, IF = 150mA | |||
| Peak Reverse Current | IRM | 2.5 | A | Max, VR = 75V |
| 50 | Max, VR = 75V, TJ = +150C | |||
| 30 | Max, VR = 25V, TJ = +150C | |||
| Total Capacitance | CT | 4.0 | pF | Max, VR = 0, f = 1.0MHz |
| Reverse Recovery Time | tRR | 4.0 | ns | Max, IF = IR = 10mA, IRR = 0.1 x IR, RL = 100 |
2412251000_DIODES-1N4448W-7-F_C124191.pdf
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