High voltage bridge rectifier DIODES GBJ5010 with 1000 volts reverse voltage and 50 amperes current rating
Key Attributes
Model Number:
GBJ5010
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1kA
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@25A
Current - Rectified:
50A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
GBJ5010
Package:
GBJ
Product Description
Product Overview
The GBJ5010 is a glass-passivated bridge rectifier designed for applications requiring high voltage and current handling capabilities. It features a low forward voltage drop and high current capability, making it ideal for printed circuit board mounting. With a reverse voltage rating of up to 1000 Volts and a forward current of 50 Amperes, this rectifier is suitable for various power supply and rectification circuits.
Product Attributes
- Brand: LSC (implied from disclaimer)
- Material: Green molding compound, UL flammability classification 94V-0 (No Br. Sb. Cl.)
- Color: Green (implied from molding compound)
- Certifications: UL recognition file # E95060
- Polarity Indicator: Symbol molded on body
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Notes |
| Maximum repetitive peak reverse voltage | VRRM | 1000 | V | ||
| Maximum DC blocking voltage | VDC | 1000 | V | ||
| Average rectified output current (with heatsink) | I(AV) | 50 | A | TC = 85C | Note 2 |
| Average rectified output current (without heatsink) | I(AV) | 4.9 | A | TC = 85C | Note 2 |
| Peak forward surge current (8.3ms single half sine-wave) | IFSM | 500 | A | @ TJ=25C | |
| Peak forward surge current (8.3ms single half sine-wave) | IFSM | 400 | A | @ TJ=125C | |
| Peak forward surge current (1ms single half sine-wave) | IFSM | 1000 | A | @ TJ=25C | |
| Peak forward surge current (1ms single half sine-wave) | IFSM | 800 | A | @ TJ=125C | |
| It rating for fusing (t = 8.3ms) | It | 1037 | AS | ||
| Mounting Torque | TOR | 0.8 | N.m | Recommended torque: 0.5 N.m | |
| Operating and storage temperature range | TJ | -55 to +150 | C | ||
| Storage temperature range | TSTG | -55 to +150 | C | ||
| Forward voltage | VF | 1.1 | V | IF = 25A, TJ = 25C | Note 1 |
| Leakage current | IR | 10 | uA | VR = 1000V, TJ = 25C | |
| Leakage current | IR | 500 | uA | VR = 1000V, TJ = 125C | |
| Typical junction capacitance | CJ | 205 | pF | @ 1.0MHz and applied reverse voltage of 4.0V DC | Note 1 |
| Typical thermal resistance (Junction to Ambient) | RthJA | 1.6 | C/W | Note 2 | |
| Typical thermal resistance (Junction to Case) | RthJC | 0.4 | C/W | Note 2 | |
| Typical thermal resistance (Junction to Lead) | RthJL | 1.2 | C/W | Device mounted on heatsink | Note 2 |
2008141234_DIODES-GBJ5010_C710238.pdf
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