Fast Switching Diode Array Diodes MMBD4448HSDW-7-F Featuring Low Reverse Current and RoHS Compliance

Key Attributes
Model Number: MMBD4448HSDW-7-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
500mA
Mfr. Part #:
MMBD4448HSDW-7-F
Package:
SOT-363
Product Description

Product Overview

The MMBD4448HCQW /AQW /ADW /CDW /SDW /TW is a surface-mount fast switching diode array designed for general-purpose switching applications. It features fast switching speed, low forward voltage, low reverse current, fast reverse recovery, and low capacitance, making it suitable for various electronic designs. The device is available in small surface-mount packages and is compliant with environmental standards.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Not specified
  • Material: Molded Plastic, "Green" Molding Compound
  • Color: Not specified
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 qualified (MMBD4448HADWQ for automotive applications), PPAP capable, IATF16949 certified facilities (MMBD4448HADWQ)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Non-Repetitive Peak Reverse VoltageVRM100V
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR80V
RMS Reverse VoltageVR(RMS)57V
Forward Continuous CurrentIFM500mA(Note 5)
Non-Repetitive Peak Forward Surge CurrentIFSM4.0 / 1.0A@ t = 1.0s / @ t = 1.0ms
Power DissipationPD200mW(Note 5)
Thermal Resistance Junction to Ambient AirRJA625C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Reverse Breakdown VoltageV(BR)R80VIR = 100A
Forward VoltageVF0.62 / 0.72 / 0.855 / 1.0 / 1.25VIF = 5.0mA / 10mA / 100mA / 150mA
Reverse CurrentIR / 100 / 50 / 30 / 25nA / AVR = 70V / VR = 75V, TJ = +150C / VR = 25V, TJ = +150C / VR = 20V
Total CapacitanceCT3.5pFVR = 6V, f = 1.0MHz
Reverse-Recovery Timetrr4.0nsVR = 6V, IF = 5mA

2412251027_DIODES-MMBD4448HSDW-7-F_C211392.pdf

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