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quality High speed SMD diode DIOTEC 1N4448W featuring low junction capacitance and conflict minerals compliance factory
quality High speed SMD diode DIOTEC 1N4448W featuring low junction capacitance and conflict minerals compliance factory

High speed SMD diode DIOTEC 1N4448W featuring low junction capacitance and conflict minerals compliance

Key Attributes
Model Number: 1N4448W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4448W
Package:
SOD-123F
Product Description

Product Overview

The 1N4148W and 1N4448W are SMD Small Signal Switching Diodes designed for high-speed applications. They feature a low profile plastic package, very high switching speed, low junction capacitance, and low leakage current. These diodes are compliant with RoHS, REACH, and Conflict Minerals regulations. Typical applications include signal processing and high-speed switching. Suffixes -Q and -AQ indicate AEC-Q101 compliance and qualification, respectively, making them suitable for automotive-grade applications.

Product Attributes

  • Brand: Diotec Semiconductor AG
  • Package Type: SOD-123F
  • Compliance: RoHS, REACH, Conflict Minerals
  • Automotive Compliance: AEC-Q101 compliant (-Q suffix), AEC-Q101 qualified (-AQ suffix)
  • Mounting: Taped and reeled (3000 / 7)
  • Case Material: UL 94V-0
  • MSL: 1
  • Alternative Case Outlines Available: DO-35, MiniMELF, Q-MiniMELF, Q-MicroMELF, SOD-323F

Technical Specifications

Specification 1N4148W / -Q / -AQ 1N4448W / -AQ
Marking Code D1 D2
HS Code 85411000
IFAV (Max. average forward current) 150 mA
VF (Forward voltage) at 10mA < 0.855 V < 0.855 V
Tjmax (Junction temperature) 150C
VRRM (Repetitive peak reverse voltage) 100 V
IFSM1 (Non repetitive peak forward surge current, tp ≤ 1 ms) 1 A 1 A
trr (Reverse recovery time) < 4 ns
Ptot (Power dissipation) 400 mW 3)
IFRM (Repetitive peak forward current) 300 mA 3)
IFSM (Non repetitive peak forward surge current, tp ≤ 1 s) 0.5 A 0.5 A
IFSM (Non repetitive peak forward surge current, tp ≤ 1 µs) 4 A 4 A
VR (Reverse voltage) 75 V
Tj, TS (Junction and Storage temperature) -55...+150C
VF (Forward voltage) at 10mA, Tj = 25C < 0.855 V < 0.855 V
IR (Leakage current) at VR = 75 V, Tj = 25C < 1 µA < 100 nA
IR (Leakage current) at VR = 75 V, Tj = 150C < 50 µA < 50 µA
CT (Junction capacitance) at VR = 0 V, f = 1 MHz typ. 2 pF
RthA (Typical thermal resistance junction to ambient) 2) 312 K/W
Weight approx. 0.01 g

1) Please note the detailed information on our website or at the beginning of the data book.
2) TA = 25C unless otherwise specified.
3) Mounted on P.C. board with 3 mm2 copper pad at each terminal.


2504101957_DIOTEC-1N4448W_C3313048.pdf

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