Super Barrier Rectifier Diodes SBR8U60P5-13 with 150C High Junction Temperature and RoHS Compliance
Key Attributes
Model Number:
SBR8U60P5-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
280A
Reverse Leakage Current (Ir):
120uA@60V
Voltage - DC Reverse (Vr) (Max):
60V
Diode Configuration:
-
Voltage - Forward(Vf@If):
460mV@8A
Current - Rectified:
8A
Mfr. Part #:
SBR8U60P5-13
Package:
PowerDI-5
Product Description
Product Overview
The SBR8U60P5 is a NEW PRODUCT 8A SBR SUPER BARRIER RECTIFIER from Diodes Incorporated, featuring ultra-low forward voltage drop and patented Super Barrier Rectifier technology. It offers soft, fast switching capability and a high operating junction temperature of 150C. This device is lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device. It is housed in a POWERDI package.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: SBR SUPER BARRIER RECTIFIER
- Package: POWERDI
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Origin: Registered trademarks of Diodes Incorporated
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage | VRRM | 60 | V | |
| Working Peak Reverse Voltage | VRWM | 60 | V | |
| DC Blocking Voltage | VRM | 60 | V | |
| Average Rectified Output Current | IO | 8 | A | Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. |
| Non-Repetitive Peak Forward Surge Current | IFSM | 280 | A | 8.3ms Single Half Sine-Wave Superimposed on Rated Load |
| Repetitive Peak Avalanche Power | PARM | 5,000 | W | (1s, +25C) |
| Thermal Resistance Junction to Soldering | RJS | 3 | C/W | (Note 6) |
| Thermal Resistance Junction to Ambient | RJA | 60 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | |
| Forward Voltage Drop | VF | 0.30 - 0.53 | V | IF = 1.0A, TJ = +25C; IF = 8A, TJ = +25C; IF = 8A, TJ = +125C |
| Leakage Current | IR | 0.12 - 100 | mA | VR = 60V, TJ = +25C; VR = 60V, TJ = +125C |
2304140030_DIODES-SBR8U60P5-13_C154726.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
