86--14775986446
quality Lead Free RoHS Compliant DIODES PDS760-13 7A Schottky Barrier Rectifier for High Frequency Inverters factory
quality Lead Free RoHS Compliant DIODES PDS760-13 7A Schottky Barrier Rectifier for High Frequency Inverters factory

Lead Free RoHS Compliant DIODES PDS760-13 7A Schottky Barrier Rectifier for High Frequency Inverters

Key Attributes
Model Number: PDS760-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
275A
Reverse Leakage Current (Ir):
200uA@60V
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
620mV@7A
Current - Rectified:
7A
Mfr. Part #:
PDS760-13
Package:
Power-DI-5
Product Description

Product Overview

The PDS760 is a 7A Schottky Barrier Rectifier designed for high-frequency inverters, free-wheeling, and polarity protection applications. It features a guard ring die construction for transient protection, low power loss, high efficiency, and low reverse leakage current. This device offers high forward surge current capability and is lead-free, RoHS compliant, and halogen/antimony-free ("Green" device).

Product Attributes

  • Brand: Diodes Incorporated
  • Part Number: PDS760
  • Package: PowerDI 5
  • Material: Molded Plastic, "Green" Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards (AEC-Q references)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR60V
RMS Reverse VoltageVR(RMS)42V
Average Rectified Output CurrentIO7ASingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine Wave)IFSM275ASuperimposed on Rated Load
Reverse Breakdown VoltageV(BR)R60VIR = 0.2mA
Forward VoltageVF0.48 - 0.56VIF = 3.5A, TS = +25C
0.41 - 0.50VIF = 3.5A, TS = +125C
Reverse Leakage CurrentIR6ATS = +25C, VR = 60V
4mATS = +125C, VR = 60V
Thermal Resistance Junction to Soldering PointRJS1.5C/WMax
Thermal Resistance Junction to Ambient Air (FR-4 PCB, 2oz. copper)RJA85C/WTyp, TA = +25C
Thermal Resistance Junction to Ambient Air (Polymide PCB, 2oz. copper)RJA70C/WTyp, TA = +25C
Thermal Resistance Junction to Ambient Air (Polymide PCB, 2oz. copper, large cathode pad)RJA45C/WTyp, TA = +25C
Operating and Storage Temperature RangeTJ, TSTG-65 to +150C

2412251154_DIODES-PDS760-13_C96113.pdf

Related Products
quality N Channel Power MOSFET SLkor SL80N10 100V 80A Low RDS ON TO 220 Package for Industrial Power Systems factory
N Channel Power MOSFET SLkor SL80N10 100V 80A Low RDS ON TO 220 Package for Industrial Power Systems
Product OverviewThe SL80N10 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features a VDS of 100V and a continuous ID of 80A, with an ultra-low RDS(ON) of less than 9m at VGS=10V. This MOSFET utilizes special process technology for high ESD capability and ...
quality High Current N Channel Superjunction MOSFET Slkor SL8N65CF with Low On Resistance and Fast Switching factory
High Current N Channel Superjunction MOSFET Slkor SL8N65CF with Low On Resistance and Fast Switching
Product OverviewThe SL8N65CF/SL8N65CD is an N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation ...
quality High Speed Switching P Channel MOSFET Slkor FDN306P Designed for Load Switching and Power Management factory
High Speed Switching P Channel MOSFET Slkor FDN306P Designed for Load Switching and Power Management
Product OverviewThe FDN306P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.Product AttributesBr...
quality Dual N Channel MOSFET Slkor SL4826A 60V 6.3A with Low RDS ON Resistance and Avalanche Voltage Rating factory
Dual N Channel MOSFET Slkor SL4826A 60V 6.3A with Low RDS ON Resistance and Avalanche Voltage Rating
Product OverviewThe SL4826A is a 60V/6.3A Dual N-Channel MOSFET designed for high-density cell design, offering ultra-low RDS(ON). It is fully characterized for avalanche voltage and current and features an excellent package for good heat dissipation. This MOSFET is ideal for power switching ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.