Super Barrier Rectifier SBR1U150SA-13 1 Ampere Surface Mount Diode for High Reliability Applications

Key Attributes
Model Number: SBR1U150SA-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
42A
Reverse Leakage Current (Ir):
100uA@150V
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Diode Configuration:
-
Voltage - Forward(Vf@If):
700mV@1A
Current - Rectified:
1A
Mfr. Part #:
SBR1U150SA-13
Package:
SMA
Product Description

SBR1U150SA 1.0A SBR SURFACE-MOUNT SUPER BARRIER RECTIFIER

The SBR1U150SA is a 1.0A surface-mount Super Barrier Rectifier designed for various applications including polarity protection, re-circulating, and blocking diodes in DC-DC and AC-DC power supplies. It features an ultra-low forward voltage drop, excellent high-temperature capability, and patented Super Barrier Rectifier (SBR) technology, offering soft and fast switching. With a high operating junction temperature of +150C, this device is lead-free, RoHS compliant, and Halogen and Antimony free, qualifying to JEDEC standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Technology: Super Barrier Rectifier (SBR)
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Finish: Lead-Free Plating (Matte Tin Finish)
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
  • Origin: Not specified in the document.
  • Color: Not specified in the document.

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Product Summary
Peak Repetitive Reverse VoltageVRRM150VTA = +25C
Average Rectified Output CurrentIO1.0ATA = +25C
Max. Forward Voltage DropVF Max0.7VTA = +25C
Max. Reverse CurrentIR Max0.1mATA = +25C
Maximum Ratings
Working Peak Reverse VoltageVRWM150VSingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RMS Reverse VoltageVR(RMS)106V
Non-Repetitive Peak Forward Surge CurrentIFSM42A8.3ms Single Half Sine Wave Superimposed on Rated Load
Repetitive Peak Avalanche PowerPARM6,000W1s, +25C
Thermal Characteristics
Thermal Resistance Junction to SolderingRJS3C/WNote 5
Thermal Resistance Junction to AmbientRJA119C/WNote 6
Thermal Resistance Junction to AmbientRJA88C/WNote 7
Operating and Storage Temperature RangeTJ, TSTG-65 to +150C
Electrical Characteristics
Reverse Breakdown VoltageV(BR)R150VIR = 100A, Note 8
Forward Voltage DropVFVIF = 1.0A, TJ = +25C
Forward Voltage DropVF0.70VIF = 1.0A, TJ = +25C
Forward Voltage DropVF0.56VIF = 1.0A, TJ = +125C
Leakage CurrentIR0.1mAVR = 150V, TJ = +25C, Note 8
Leakage CurrentIR10mAVR = 150V, TJ = +125C, Note 8
Total CapacitanceCJ85pFVR = 4V, f = 1MHz
Reverse-Recovery TimetRR9nsIF = 0.5A, IR = 1A, IRR = 0.25A (RG1)

2412251004_DIODES-SBR1U150SA-13_C151618.pdf

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