5A Schottky Barrier Rectifier Diodes PDS5100-13 Designed for Applications Requiring High Surge Current
Diodes Incorporated PDS5100 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
The PDS5100 is a 5A high voltage Schottky barrier rectifier featuring guard ring die construction for transient protection, high surge current capability, low leakage current, and low forward voltage drop. It is designed for applications requiring high reliability and is qualified to AEC-Q101 standards. The device is lead-free, RoHS compliant, and halogen/antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Case Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 Standards, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| Working Peak Reverse Voltage | VRWM | 100 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| DC Blocking Voltage | VR | 100 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| RMS Reverse Voltage | VR(RMS) | 71 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| Average Rectified Output Current | IO | 5 | A | Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. |
| Non-Repetitive Peak Forward Surge Current | IFSM | 120 | A | 8.3ms Single half sine-wave Superimposed on Rated Load |
| Thermal Resistance Junction to Soldering Point | RJS | 2.6 | C/W | Max |
| Thermal Resistance Junction to Ambient Air (Note 5) | RJA | 90 | C/W | Typ, TA = +25C |
| Thermal Resistance Junction to Ambient Air (Note 6) | RJA | 70 | C/W | Typ, TA = +25C |
| Thermal Resistance Junction to Ambient Air (Note 7) | RJA | 50 | C/W | Typ, TA = +25C |
| Operating Temperature Range | TJ | -65 to +150 | C | |
| Storage Temperature Range | TSTG | -65 to +175 | C | |
| Reverse Breakdown Voltage (Note 8) | V(BR)R | 100 | V | IR = 200A |
| Forward Voltage | VF | 0.74 - 0.79 | V | IF = 5A, TS = +25C |
| Forward Voltage | VF | 0.64 - 0.68 | V | IF = 5A, TS = +100C |
| Forward Voltage | VF | 0.60 - 0.64 | V | IF = 5A, TS = +125C |
| Forward Voltage | VF | 0.81 - 0.89 | V | IF = 10A, TS = +25C |
| Forward Voltage | VF | 0.68 - 0.73 | V | IF = 10A, TS = +125C |
| Reverse Leakage Current (Note 8) | IR | 0.002 - 0.015 | mA | TS = +25C, VR = 100V |
| Reverse Leakage Current (Note 8) | IR | 0.5 - 3 | mA | TS = +100C, VR = 100V |
| Reverse Leakage Current (Note 8) | IR | 2 - 5 | mA | TS = +125C, VR = 100V |
2412251000_DIODES-PDS5100-13_C124201.pdf
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