Doeshare MMBT4403 PNP Switching Transistor Featuring 300mW Power Dissipation and Compact SOT23 Package
Key Attributes
Model Number:
MMBT4403
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT4403
Package:
SOT-23
Product Description
Product Overview
MMBT4403 is a PNP Plastic-Encapsulate Switching Transistor designed for general-purpose applications. It offers high stability and reliability, housed in a compact SOT-23 small outline plastic package. With a power dissipation of 300mW, this transistor is suitable for various switching applications where space and performance are critical.Product Attributes
- Brand: MMBT4403 (Implied from product name)
- Package Type: SOT-23 Plastic-Encapsulate
- Transistor Type: PNP Switching Transistor
- Certifications: Epoxy UL: 94V-0
- Marking: 2T
Technical Specifications
| Parameter | Symbol | Test Condition | Unit | Min | Max | |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Collector-Base Voltage | VCBO | V | -40 | |||
| Collector-Emitter Voltage | VCEO | V | -40 | |||
| Emitter-Base Voltage | VEBO | V | -5 | |||
| Collector Current-Continuous | IC | mA | -600 | |||
| Collector Power Dissipation | PC | mW | 300 | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Thermal resistance From junction to ambient | RJA | /W | 417 | |||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | V | -40 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | V | -40 | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | V | -5 | ||
| Collector cut-off current | ICBO | VCB=-35V, IE=0 | nA | -100 | ||
| Collector cut-off current | ICEX | VCE=-35V, VEB(off)=-0.4V | nA | -100 | ||
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | nA | -100 | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-0.1mA | 30 | |||
| hFE(2) | VCE=-1V, IC=-1mA | 60 | ||||
| hFE(3) | VCE=-1V, IC=-10mA | 100 | ||||
| hFE(4) | VCE=-2V, IC=-150mA | 100 | 300 | |||
| DC current gain | hFE(5) | VCE=-2V, IC=-500mA | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA, IB=-15mA | V | -0.40 | ||
| VCE(sat) | IC=-500mA, IB=-50mA | V | -0.75 | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-150mA, IB=-15mA | V | -0.95 | ||
| VBE(sat) | IC=-500mA, IB=-50mA | V | -1.30 | |||
| Transition frequency | fT | VCE=-10V, IC=-20mA,f=100MHz | MHz | 200 | ||
| Switching Time | Delay time | td | VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA | nS | 15 | |
| Rise time | tr | nS | 20 | |||
| Switching Time | Storage time | ts | VCC=-30V, IC=-150mA, IB1=IB2=-15mA | nS | 225 | |
| Fall time | tf | nS | 60 | |||
2411220144_Doeshare-MMBT4403_C2931714.pdf
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