DIODES DMP6023LE 13 60V P Channel MOSFET with moisture sensitivity level 1 and UL 94V 0 flammability

Key Attributes
Model Number: DMP6023LE-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
143pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
2.569nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
53.1nC@10V
Mfr. Part #:
DMP6023LE-13
Package:
SOT-223
Product Description

Product Overview

The DMP6023LE is a 60V P-Channel Enhancement Mode MOSFET engineered for high efficiency power management applications. It is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal applications include backlighting, power management functions, and DC-DC converters. This device features low on-resistance, fast switching speed, low threshold, low gate drive, and low input capacitance. It is lead-free, RoHS compliant, and a "Green" device, free from halogen and antimony. The DMP6023LE is qualified to AEC-Q101 standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: DMP6023LE
  • Case Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe
  • Compliance: Standard, AEC-Q101 Qualified
  • Environmental: Lead-Free Finish; RoHS Compliant, Halogen and Antimony Free. Green Device

Technical Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage VDSS -60 V VGS = 0V, ID = -250A
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TA = +25C) ID -7 A VGS = -10V
Continuous Drain Current (TA = +70C) ID -5.6 A VGS = -10V
Continuous Drain Current (TC = +25C) ID -18.2 A
Continuous Drain Current (TC = +70C) ID -14.5 A
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM -50 A
Maximum Continuous Body Diode Forward Current IS -2 A
Avalanche Current, L = 0.1mH IAS -35.5 A
Avalanche Energy, L = 0.1mH EAS 62.9 mJ
Total Power Dissipation (TA = +25C) PD 2 W
Total Power Dissipation (TA = +70C) PD 1.3 W
Thermal Resistance, Junction to Ambient RJA 60 C/W
Total Power Dissipation (TC = +25C) PD 17.3 W
Thermal Resistance, Junction to Case RJC 7.2 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Gate Threshold Voltage VGS(th) -1 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance (VGS = -10V, ID = -5A) RDS(ON) 28 m
Static Drain-Source On-Resistance (VGS = -4.5V, ID = -4A) RDS(ON) 35 m
Diode Forward Voltage VSD -0.7 V VGS = 0V, IS = -1A
Input Capacitance Ciss 2569 pF VDS = -30V, VGS = 0V, f = 1MHz
Output Capacitance Coss 179 pF VDS = -30V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance Crss 143 pF VDS = -30V, VGS = 0V, f = 1MHz
Gate Resistance Rg 8 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg 26.5 nC VDS = -30V, ID = -5A
Total Gate Charge (VGS = -10V) Qg 53.1 nC VDS = -30V, ID = -5A
Gate-Source Charge Qgs 7.1 nC VDS = -30V, ID = -5A
Gate-Drain Charge Qgd 12.6 nC VDS = -30V, ID = -5A
Turn-On Delay Time tD(on) 6 ns VGS = -10V, VDS = -30V, RG = 3, ID = -5A
Turn-On Rise Time tr 7.1 ns VGS = -10V, VDS = -30V, RG = 3, ID = -5A
Turn-Off Delay Time tD(off) 110 ns VGS = -10V, VDS = -30V, RG = 3, ID = -5A
Turn-Off Fall Time tf 62 ns VGS = -10V, VDS = -30V, RG = 3, ID = -5A
Body Diode Reverse Recovery Time trr 20 nS IF = -5A, di/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr 14 nC IF = -5A, di/dt = 100A/s
Weight 0.112 grams (Approximate)
Package SOT223
Packaging 2,500/Tape & Reel DMP6023LE-13

Package Outline Dimensions (SOT223):

Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 - - 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89

All Dimensions in mm


1808280023_DIODES-DMP6023LE-13_C154901.pdf

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