Switching Transistor DoesShare DP2121KM P Channel Enhancement Mode with Low Rds on and RoHS Compliance
Key Attributes
Model Number:
DP2121KM
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
450mA
RDS(on):
950mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
-
Input Capacitance(Ciss):
115pF@16V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
DP2121KM
Package:
SOT-723
Product Description
Product Overview
The DP2121KM is a P-Channel Enhancement Mode Field Effect Transistor designed for switching applications. It features low Rds(on) and operates with a VDS of -20V and an ID of -0.45A. This device is lead-free and compliant with EU RoHS 2011/65/EU Directive, manufactured using a green molding compound as per IEC61249 Std. It is supplied in a SOT-723 package.
Product Attributes
- Brand: DOESHARE
- Product Type: P-Channel Enhancement Mode Field Effect Transistor
- Compliance: EU RoHS 2011/65/EU Directive
- Material: Green molding compound as per IEC61249 Std.
- Package: SOT-723
- Terminals: Solderable per MIL-STD-750, Method 2026
- Device Marking Code: KD
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-source Voltage | VDS | -20 | V | |||
| Gate-source Voltage | VGS | 12 | V | |||
| Drain Current | ID | -0.45 | A | |||
| Pulsed Drain Current | IDM | -0.9 | A | |||
| Total Power Dissipation @ TA=25 | PD | 0.15 | W | |||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 833 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| Static Parameter | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 12V, VDS=0V | 20 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | -0.35 | -0.77 | -1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-0.45A | 0.40 | 0.52 | ||
| VGS=-2.5V, ID=-0.35A | 0.55 | 0.70 | ||||
| VGS=-1.8V, ID=-0.25A | 0.80 | 0.95 | ||||
| Diode Forward Voltage | VSD | IS=150mA,VGS=0V | -0.85 | -1.2 | V | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-16V, VGS=0V,f=1MHZ | 115 | pF | ||
| Output Capacitance | Coss | pF | ||||
| Reverse Transfer Capacitance | Crss | 9 | pF | |||
| Switching Parameters | ||||||
| Turn-on Delay Time | tD(on) | VGS=-4.5V, VDD=-10V, RG=10, ID=0.2A | 9.2 | ns | ||
| Turn-on Rise Time | tr | 6 | ns | |||
| Turn-off Delay Time | tD(off) | 33 | ns | |||
| Turn-off Fall Time | tf | 21 | ns | |||
| Mechanical Data | ||||||
| Approx. Weight | 0.0013 | gram | ||||
| 0.00005 | ounce | |||||
2410121629_Doeshare-DP2121KM_C2931704.pdf
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